ADVANCED INFORMATION MPS2222A SMALL SIGNAL TRANSISTORS (NPN) TO-92 FEATURES 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ On special request, this transistor is also manufactured in the pin configuration TO-18. ¨ This transistor is also available in the SOT-23 case with the type designation MMBT2222A max. Æ 0.022 (0.55) 0.098 (2.5) E C B Dimensions in inches and (millimeters) MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage VCBO 75 Volts Collector-Emitter Voltage VCEO 40 Volts Emitter-Base Voltage VEBO 6.0 Volts Collector Current-Continuous IC 600 mA Power Dissipation at TA=25°C Derate above 25°C Ptot 625 5.0 mW mW/°C Power Dissipation at TC=25°C Derate above 25°C Ptot 1.5 12 W mW/°C Thermal Resistance, Junction to Ambient Air RQJA 200 °C/W Thermal Resistance Junction to Case RQJC 83.3 ¡C/W Junction Temperature Tj 150 ¡C Storage Temperature Range TS Ð55 to +150 ¡C 2/22/99 MPS2222A ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. Collector-Base Breakdown Voltage at IC = 10 mA, IE = 0 V(BR)CBO 75 Ð Volts Collector-Emitter Breakdown Voltage(1) at IC = 10 mA, IB = 0 V(BR)CEO 40 Ð Volts Emitter-Base Breakdown Voltage at IE = 10 mA, IC = 0 V(BR)EBO 6.0 Ð Volts Collector-Emitter Saturation Voltage(1) at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA VCEsat VCEsat 0.6 Ð 0.3 1.0 Volts Volts Base-Emitter Saturation Voltage(1) at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA VBEsat VBEsat Ð Ð 1.2 2.0 Volts Volts Collector Cutoff Current at VEB = 3 V, VCE = 60 V ICEX Ð 10 nA Collector Cutoff Current at VCB = 60 V, IE = 0 at VCB = 50 V, IE = 0, TA=125°C ICBO Ð Emitter Cutoff Current at VEB = 3 V, IC = 0 MAX. UNIT mA 0.01 10 IEBO Ð 100 nA IBL Ð 20 nA hFE hFE hFE hFE hFE hFE hFE 35 50 75 35 100 50 40 Ð Ð Ð Ð 300 Ð Ð Ð Ð Ð Ð Ð Ð Ð Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz at VCE = 10 V, IC = 10 mA, f = 1 kHz hie 2.0 0.25 8.0 1.25 kW Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHz at VCE = 10 V, IC = 10 mA, f = 1 kHz hre Ð 8 ¥ 10-4 4 ¥ 10-4 Ð Current Gain-Bandwidth Product at VCE = 20 V, IC = 20 mA, f = 100 MHz fT 300 Ð MHz Output Capacitance at VCB = 10 V, f = 1 kHz, IE=0 COBO Ð 8.0 pF Input Capacitance at VEB = 0.5 V, f = 1 kHz, IC=0 CIBO Ð 25 pF Base Cutoff Current at VCE = 60 V, VEB = 3.0 V DC Current Gain at VCE = 10 V, IC = 0.1 mA at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 10 V, IC = 10 mA, TA=-55°C at VCE = 10 V, IC = 150 mA(1) at VCE = 1.0 V, IC = 150 mA(1) at VCE = 10 V, IC = 500 mA(1) NOTES (1) Pulse test: Pulse width ² 300ms - Duty cycle ² 2% MPS2222A ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz at VCE = 10 V, IC = 10 mA, f = 1 kHz hfe 50 75 300 375 Ð Ð Output Admittance at VCE = 10 V, IC = 1 mA, f = 1 kHz at VCE = 10 V, IC = 10 mA, f = 1 kHz hoe 5.0 25 35 200 mS rb¢CC Ð 150 ps NF Ð 4.0 dB Delay Time (see fig.1) at IB1 = 15 mA, IC = 150 mA, VCC=30V, VBE = -0.5V td Ð 10 ns Rise Time (see fig.1) at IB1 = 15 mA, IC = 150 mA, VCC=30V, VBE = -0.5V tr Ð 25 ns Storage Time (see fig. 2) at IB1 = IB2 = 15 mA, IC = 150 mA, VCC=30V ts Ð 225 ns Fall Time (see fig. 2) at IB1 = IB2 = 15 mA, IC = 150 mA, VCC=30V tf Ð 60 ns Collector Base Time Constant at IE = 20 mA, VCB = 20 V, f = 31.8 MHz Noise Figure at VCE = 10 V, IC = 100 mA, RS = 1 kW f = 1 kHZ SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 1 - TURN-ON TIME 1.0 to 100 ms, DUTY CYCLE Å 2% FIGURE 2 - TURN-OFF TIME +30V 1.0 to 100 ms, DUTY CYCLE Å 2% 200W +30V 200W +16 V +16 V 0 0 1kW -2 V < 2 ns C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope C S* < 10 pF 1kW -14 V < 20 ns -4 V