S2A thru S2M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AA (SMB) • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 50 V to 1000 V IFSM 50 A IR 1.0 µA VF 1.15 V TJ max. 150 °C MECHANICAL DATA Case: DO-214AA (SMB) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code S2A S2B S2D S2G S2J S2K S2M SA SB SD SG SJ SK SM UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Maximum average forward rectified current at TL= 100 °C IF(AV) 1.5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG - 55 to + 150 °C Operating and storage temperature range Document Number: 88712 Revision: 08-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V www.vishay.com 1 S2A thru S2M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.5 A SYMBOL S2A S2B S2D S2G S2J S2K S2M UNIT VF 1.15 V Maximum DC reverse current at rated DC blocking voltage TA= 25 °C TA= 125 °C IR 1.0 125 µA Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.0 µs Typical junction capacitance 4.0 V, 1 MHz CJ 16 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL S2A S2B S2D S2G RθJA RθJL Typical thermal resistance (1) S2J S2K S2M 53 16 UNIT °C/W Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3 x 0.3" (8.0 x 8.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) REFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE S2J-E3/52T 0.096 52T 750 7" diameter plastic tape and reel S2J-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel S2JHE3/52T (1) 0.096 52T 750 7" diameter plastic tape and reel S2JHE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 1.75 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 1.50 1.25 1.00 0.75 60 Hz Resistive or Inductive Load P.C.B. Mounted 0.27 x 0.27" (7.0 x 7.0 mm) Copper Pad Areas 0.50 0.25 TL = 100 °C 8.3 ms Single Half Sine-Wave 40 30 20 10 0 0 50 70 90 110 130 150 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88712 Revision: 08-Apr-08 S2A thru S2M Vishay General Semiconductor 100 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TJ = 125 °C 1 TJ = 25 °C 0.1 0.01 0.3 0.5 0.7 0.9 1 0.1 1.3 1.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 1000 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0 20 40 60 80 10 1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Mounting Pad Layout Cathode Band 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 88712 Revision: 08-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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