VISHAY P4SMA6.8A

P4SMA Series
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 % (300 W above 91 V)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
VBR uni-directional
6.8 V to 540 V
VBR bi-directional
6.8 V to 220 V
PPPM
400 W, 300 W
PD
3.3 W
IFSM (uni-directional only)
40 A
TJ max.
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against
voltage transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of
sensor units for consumer, computer, industrial and
telecommunication.
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g.
P4SMA10CA).
Electrical characteristics apply in both directions.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Peak power dissipation with a 10/1000 µs waveform
(1)(2)
(Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3)
Power dissipation on infinite heatsink, TA = 50 °C
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
VALUE
UNIT
PPPM
400
W
IPPM
See next table
A
PD
3.3
W
IFSM
40
A
TJ, TSTG
- 65 to + 150
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 300 W above 91 V
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
Document Number: 88367
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
P4SMA Series
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PART NUMBER
P4SMA6.8A
P4SMA7.5A
P4SMA8.2A
P4SMA9.1A
P4SMA10A
P4SMA11A
P4SMA12A
P4SMA13A
P4SMA15A
P4SMA16A
P4SMA18A
P4SMA20A
P4SMA22A
P4SMA24A
P4SMA27A
P4SMA30A
P4SMA33A
P4SMA36A
P4SMA39A
P4SMA43A
P4SMA47A
P4SMA51A
P4SMA56A
P4SMA62A
P4SMA68A
P4SMA75A
P4SMA82A
P4SMA91A
P4SMA100A
P4SMA110A
P4SMA120A
P4SMA130A
P4SMA150A
P4SMA160A
P4SMA170A
P4SMA180A
P4SMA200A
P4SMA220A
P4SMA250A
P4SMA300A
P4SMA350A
P4SMA400A
P4SMA440A
P4SMA480A
P4SMA510A
P4SMA540A
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
UNI
BI
MIN.
MAX.
6V8A
7V5A
8V2A
9V1A
10A
11A
12A
13A
15A
16A
18A
20A
22A
24A
27A
30A
33A
36A
39A
43A
47A
51A
56A
62A
68A
75A
82A
91A
100A
110A
120A
130A
150A
160A
170A
180A
200A
220A
250A
300A
350A
400A
440A
480A
510A
540A
6V8C
7V5C
8V2C
9V1C
10C
11C
12C
13C
15C
16C
18C
20C
22C
24C
27C
30C
33C
36C
39C
43C
47C
51C
56C
62C
68C
75C
82C
91C
100C
110C
120C
130C
150C
160C
170C
180C
200C
220C
-
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
105
114
124
143
152
162
171
190
209
237
285
333
380
418
456
485
513
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
231
263
315
368
420
462
504
535
567
VBR AT IT (1)
TEST
STAND-OFF
CURRENT
VOLTAGE
IT
VWM (V)
(mA)
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
77.8
85.5
94.0
102
111
128
136
145
154
171
185
214
256
300
342
376
408
434
459
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
PEAK
PULSE
CURRENT
ID (4) (µA)
IPPM (2) (A)
1000
500
200
50.0
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
38.1
35.4
33.1
29.9
27.6
25.6
24.0
22.0
18.9
17.8
15.9
14.4
13.1
12.0
10.7
9.7
8.8
8.0
7.4
6.7
6.2
5.7
5.2
4.7
4.3
3.9
3.5
3.2
2.2
2.0
1.8
1.7
1.4
1.4
1.3
1.2
1.1
0.90
0.87
0.73
0.62
0.55
0.50
0.46
0.43
0.41
MAXIMUM
MAXIMUM
CLAMPING
TEMPERATURE
VOLTAGE
OF VBR
AT IPPM
(%/°C)
VC (V)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
104
113
125
137
152
165
179
207
219
234
246
274
328
344
414
482
548
602
658
698
740
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.089
0.090
0.092
0.090
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.106
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bi-directional types with VR 10 V and less, the ID limit is doubled
(5) VF = 3.5 V at IF = 25 A (uni-directional only)
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88367
Revision: 21-Oct-08
P4SMA Series
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to ambient
SYMBOL
VALUE
RθJA
120
°C/W
RθJL
30
°C/W
air (1)
Thermal resistance, junction to leads
UNIT
Note:
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
P4SMA6.8A-E3/61
0.064
61
1800
7" diameter plastic tape and reel
0.064
5A
7500
13" diameter plastic tape and reel
P4SMA6.8A-E3/5A
(1)
0.064
61
1800
7" diameter plastic tape and reel
P4SMA6.8AHE3/5A (1)
0.064
5A
7500
13" diameter plastic tape and reel
P4SMA6.8AHE3/61
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
Half Value - IPP
2
IPPM
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
0
1.0
2.0
3.0
td - Pulse Width (s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
100
4.0
10 000
CJ - Junction Capacitance (pF)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
P4SMA6.8A P4SMA91A
P4SMA100A P4SMA220A
IPPM - Peak Pulse Current, % IRSM
PPPM - Peak Pulse Power (kW)
100
75
50
25
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Stand-Off
Voltage VWM
1000
Uni-Directional
100
Bi-Directional
10
0
25
50
75
100
125
150
175
200
1
10
100
TJ - Initial Temperature (°C)
VBR - Breakdown Voltage (V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 4. Typical Junction Capacitance
Document Number: 88367
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
200
www.vishay.com
3
P4SMA Series
Vishay General Semiconductor
200
Peak Forward Surge Current (A)
Transient Thermal Impedance (°C/W)
1000
100
10
1
0.001
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
10
0.01
0.1
1
10
100
1000
1
5
tp - Pulse Duration (s)
10
50
100
Number of Cycles at 60 Hz
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88367
Revision: 21-Oct-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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