RZQ045P01 Transistors 1.5V Drive Pch MOSFET RZQ045P01 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (5) 0.85 0.7 (4) 1.6 2.8 (6) (2) 0~0.1 0.3~0.6 (1) (3) 1pin mark 0.16 0.4 Each lead has same dimensions zApplications Switching Abbreviated symbol : YG zEquivalent circuit zPackaging specifications Package Type Taping (5) (6) (4) TR Code Basic ordering unit (pieces) 3000 ∗2 RZQ045P01 ∗1 (2) (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg ∗1 ∗1 ∗2 Limits −12 ±10 ±4.5 ±12 −1 −12 1.25 150 −55 to +150 Unit V V A A A A W °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 100 °C / W ∗ Mounted on a ceramic board. 1/5 RZQ045P01 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − ∗ − Static drain-source on-state RDS (on) resistance − − Forward transfer admittance Yfs ∗ 6.5 Input capacitance − Ciss Output capacitance − Coss Reverse transfer capacitance − Crss Turn-on delay time td (on) ∗ − Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge Qgs ∗ − Gate-drain charge Qgd ∗ − Typ. Max. − − − − 25 31 39 50 − 2450 320 290 12 75 390 215 31 4.5 4.0 ±10 − −1 −1.0 35 43 58 100 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −4.5A, VGS= −4.5V ID= −2.2A, VGS= −2.5V ID= −2.2A, VGS= −1.8V ID= −0.9A, VGS= −1.5V VDS= −6V, ID= −4.5A VDS= −6V VGS=0V f=1MHz ID= −2.2A VDD −6V VGS= −4.5V RL 2.7Ω RG=10Ω VDD −6V RL 1.3Ω VGS= −4.5V RG=10Ω ID= −4.5A ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. Unit − − −1.2 V Conditions IS= −4.5A, VGS=0V ∗Pulsed 2/5 RZQ045P01 Transistors zElectrical characteristic curves 10 8 6 -1.5V -1.4V 4 -1.3V 2 VGS=-1.2V 0 10 -10V -1.6V 8 -1.5V 6 1.4V -1.2V 2 VGS=-1.1V 0.4 0.6 0.8 1.0 0 2 Fig.1 Typical Output Characteristics(Ⅰ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25℃ Pulsed 100 VGS=-1.5V VGS=-1.8V VGS=-2.5V VGS=-4.5V 10 1 0.1 1 6 8 0.5 VGS= -4.5V Pulsed 1 0.1 1 10 VGS= -2.5V Pulsed 1 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 2.0 VGS= -1.5V Pulsed 100 Ta =125℃ Ta =75℃ Ta =25℃ Ta =-25℃ 10 1 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 100 10 1 0.1 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1.5 1000 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1000 100 1.0 Fig.3 Typical Transfer Characteristics 1 DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] VGS= -1.8V Pulsed 1 VDS= -6V Pulsed Fig.2 Typical Output Characteristics(Ⅱ) 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 0.1 0.01 GATE-SOURCE VOLTAGE : -VGS[V] DRAIN-CURRENT : -ID[A] 10 0.1 DRAIN-SOURCE VOLTAGE : -VDS[V] 100 10 Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.001 0.0 10 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) REVERSE DRAIN CURRENT : -Is [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 4 Ta=125℃ 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0.2 DRAIN-SOURCE VOLTAGE : -VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] -1.3V 4 0 0.0 1000 Ta=25℃ Pulsed DRAIN CURRENT : -ID[A] Ta=25℃ Pulsed -10V -4.5V -2.5V -1.8V DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 10 100 VGS=0V Pulsed 10 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 RZQ045P01 Transistors 100 Ta=25℃ Pulsed 60 ID= -2.2A ID= -4.5A 40 20 0 2 4 6 8 10 1 Ta= 125℃ 0.1 10 0.1 1 1000 Coss Crss SWITCHING TIME : t [ns] Ciss 10000 tf 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 10 td(on) 1 0.01 0.1 1 10 100 0.01 0.1 1 35 Fig.12 Dynamic Input Characteristics 100 tr 100 3.5 Ta=25℃ VDD= -6V ID= -4.5A RG=10Ω Pulsed Ta=25°C VDD= -6V VGS=-4.5V RG=10Ω Pulsed td(off) 1000 4 TOTAL GATE CHARGE : Qg [nC] Fig.11 Forward Transfer Admittance vs. Drain Current 100000 10000 Ta=25°C f=1MHz VGS=0V 10 DRAIN-CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage CAPACITANCE : C [pF] Ta= -25℃ Ta= 25℃ Ta= 75℃ 0.01 0.01 0 4.5 VDS=-6V Pulsed GATE-SOURCE VOLTAGE : -VGS [V] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 80 10 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-CURRENT : -ID[A] Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Switching Characteristics 4/5 RZQ045P01 Transistors zMeasurement circuits Pulse Width VGS ID VGS VDS 10% 50% 90% RL 50% 10% D.U.T. 10% RG VDD VDS 90% td(on) tr 90% td(off) ton tf toff Fig.16 Switching Waveforms Fig.15 Switching Time Measurement Circuit VG VGS ID VDS RL IG(Const) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.17 Gate Charge Measurement Circuit Fig.18 Gate Charge Waveform zNotice This product might cause chip aging and breakdown under the large electrified environment . Please consider to design ESD protection circuit. 5/5 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products are not designed to be radiation tolerant. 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