MITSUBISHI LASER DIODES ML3xx2 LD SERIES FOR INDUSTRIAL SYSTEMS ML320G2-11 / ML329G2-11 TYPE NAME Please note that this data sheet may be changed without any notice. DESCRIPTION FEATURES • High Output Power: 120mW (CW) ML3XX2 is a high-power, high-efficient blue-violet semiconductor laser which provides a stable, single • High Efficiency: 1.7mW/mA (typ.) transverse mode oscillation with emission wavelength of • Visible Light: 405nm (typ.) 405nm and standard light output of 120mW(CW). • Package: φ5.6mm TO-CAN PKG (ML320G2) φ3.8mm TO-CAN PKG (ML329G2) APPLICATION • Industrial , Bio-medical systems ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Parameter Conditions Ratings Unit Po Light output power CW 120 mW VRL Reverse voltage - 2 V Tc Case temperature - +5 ~ +80 °C Tstg Storage temperature - -40 ~ +100 °C Note1: The maximum rating means the limitation over which the laser should not be operated even instant time. This does not mean the guarantee of its lifetime. Additionally, LD lifetime is strongly dependent on the case temperature. As for the reliability, please refer to the reliability report issued by Quality Assurance Section, HF & Optical Semiconductor Division, Mitsubishi Electric Corporation. ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C) Symbol Parameter Test conditions Min. Typ. Max Unit Ith Threshold current CW - 45 70 mA Iop Operating current CW, Po=120mW - 120 160 mA Vop Operating voltage CW, Po=120mW - 5.0 6.0 V η Slope efficiency CW, Po=120mW 1.3 1.7 2.0 mW/mA λp Peak wavelength CW, Po=120mW 400 405 410 nm θ// Beam divergence angle (parallel) CW, Po=120mW 6 8 12 ° θ⊥ Beam divergence angle (perpendicular) CW, Po=120mW 15 17 21 ° MITSUBISHI ELECTRIC (1/4) As of Oct. 2009 MITSUBISHI LASER DIODES ML3xx2 LD SERIES FOR INDUSTRIAL SYSTEMS OUTLINE DRAWINGS Dimentions in mm φ2.0±0.3 (P. C. D. ) 0.4 +0.1 -0 90°±2° ML320G2 0.4+0.1 -0 x (1) (3) CASE LD +0 φ5.6 -0.03 φ4.4 +0.2 -0.3 φ3.55±0.1 φ1.6±0.1 (2) 1.27 ±0.08 2.3 ±0.3 0.25 ±0.03 (Glass) 1.0±0.1 1.2 ±0.1 Reference plane 7.0 ±1 0.2±0.08 φ5.6mm ML320G2 0.4MAX 3-φ0.45±0.1 (1) (3) (2) Dimentions in mm φ1.43±0.3 (P.C.D) 0.25±0.15 0.3 0.8±0.15 φ3.8 +0 -0.03 φ3.06±0.3 φ2.56±0.1 (1) CASE φ1.3±0.1 1.27±0.08 (3) LD Reference plane (2) 6.5±1.0 1.0±0.1 2.1±0.15 0.25±0.03 (Glass) 0.25+0.1 -0 90±2° ML329G2 ML329G2 3-φ0.35±0.1 φ3.8mm (1) (3) (2) MITSUBISHI ELECTRIC (2/4) As of Oct. 2009 MITSUBISHI LASER DIODES ML3xx2 LD SERIES FOR INDUSTRIAL SYSTEMS Typical Characteristics of ML320G2 Tc=0 25 40 60 75 80℃ 120 Po=120mW CW 100 θ∥ =8° Intensity (a.u.) Light Output Power (mW) CW 80 60 40 θ⊥ =17° 20 0 0 50 100 150 -50 -40 -30 -20 -10 0 10 20 30 40 50 200 Angle (°) Current (mA) Far-Field-Patterns Light Output Power vs. Current (CW) 415 Tc=25℃ CW 410 Peak Wavelength (nm) Peak Wavelength (nm) 415 405 400 395 ～ 0.01nm/mW Po=120mW CW 410 405 400 395 ～ 0.06nm/℃ 390 390 0 50 100 Light output Power (mW) 0 150 10 20 30 40 50 60 70 80 Temperature (℃ ) Peak Wavelength vs. Light Output Power Peak Wavelength vs. Temperature MITSUBISHI ELECTRIC (3/4) As of Oct. 2009 MITSUBISHI LASER DIODES ML3xx2 LD SERIES FOR INDUSTRIAL SYSTEMS Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. 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