HTSEMI 1SS372

S
1 S372
SCHOTTKY BARRIER DIODE
SOT-323
FEATURES
 Small Package
 Low Forward Voltage
APPLICATIONS
 High Speed Switching
MARKING: N9
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
Unit
VR
DC Blocking Voltage
10
V
IO
Forward Continuous Current
100
mA
IFM
Peak Forward Current
200
mA
IFSM
Surge Current@10ms
1
A
PD
Power Dissipation
100
mW
Thermal Resistance From Junction To Ambient
1000
℃/W
Tj
Junction Temperature
125
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Reverse voltage
V(BR)
Reverse current
IR
Forward voltage
Total capacitance
VF
Ctot
Test conditions
IR=100μA
Min
Typ
Max
Unit
10
V
VR=10V
20
IF=1mA
0.18
IF=5mA
0.3
μA
V
IF=100mA
0.5
VR=0V,f=1MHz
40
pF
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05