广州市新亿彩电子科技有限公司 EPD0603-TR8 Photo Transistor Dimensions (Unit:mm) The EPD0603-TR8i a photo transistor in miniature SMD package .The device is Spectrally matched to visibleand infrared emtting diode Features • • • • Compact Low profile package, Low-cost Small junction capacitance RoHS Compliance Applications • • • • Optical switches Counters and sorter Position sensor Infrared applied system Maximum Ratings Item (Ta= 25℃ ) Symbol Rating Unit VCEO VECO IC PC 30 6 20 75 -25～+85 -40～+85 260 V V mA mW ℃ Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Collector Power Dissipation Operating temperature Storage temperature Soldering temperature *1 Topr. Tstg. Tsol. ℃ ℃ *1. Lead Soldering Temperature (2mm from case for 5sec). Electro- Optical Characteristics Item Symbol Conditions ICEO VCEO =10V Min. Typ. Max. Unit - 1 100 μA *2 VCE=5V,1000Lux - 1.3 - mA VCE(sat) IC=2mA,IB=100μA - 0.14 0.4 V Rise Time tr - 3.2 - μs Fall Time tf VCC=5V, IC=1mA, RL=1000Ω - 4.8 - μs Collector Dark Current IL Collector Current C-E Saturation Voltage Response Time (Ta= 25℃ ) Spectral sensitivity λ Peak wavelength λp - 880 - nm Half angle Δθ - ±65 - deg. 500~1050 nm *2. Color Temp = 2856K Standard Tungsten lamp TEL:020-84859506 84851526 FAX:020-84851726 http://www.everlight58.com E-mail:[email protected] 广州市新亿彩电子科技有限公司 Photo Tansistor EPD0603-TR8 Collector power dissipation Vs. Ambient temperature Collector Current Vs. Illuminance (mA) Ta=25 ℃ VCE =5V 101 10 0 10-1 1 10 40 60 80 100 (℃) 20 Ambient temperature(Ta) (mA) EV = 1500Lx 1.4 EV= 1000Lx 0.7 0 20 (nA) 10 3 VCE= 5V IC = 1mA Ta=25℃ 10 2 tr tf 10 1 EV = 500Lx 0 40 Dark current Vs. Ambient temperature (μs) Response time tr, tf EV = 2000Lx 2.1 60 Switching time Vs. Load resistance Ta=25 ℃ 2.8 80 0 400 500 600 700 800 900 10001100(nm) Wavelength(λ) 2 103 10 2 104 (mW/cm ) Illuminance Ee Collector dark current I CEO 0 Relative intensity 50 0 100 102 100 Collector Current Vs. Collector-Emitter Voltage Collector current(IC ) (%) Ta=25 ℃ Collector Current Ic Collector power dissipationPC (mW) 4 6 8 (V) 2 Collector-Emitter Voltage(VCE ) Relative sensitivity Vs. Wavelengh 10 0 2 10 10 3 10 4 10 5 Road Resistance(RL) Ω 10 2 VCE= 10V 10 1 10 0 10 -1 0 20 40 60 80 100 (℃) Ambient temperature(Ta) Radiant Pattern Switching time measurement circuit Angle(deg.) 0 0 -20 VCC OUT 0 IC 0 50 -80 -100 + 1 0 0 +8 0 + 6 50 50 -4 I FP RL 0 100 Ta=25 ℃ -6 0 +4 + 20 100 Input 90% 10% Output tr tf Relative intensity(%) TEL:020-84859506 84851526 FAX:020-84851726 http://www.everlight58.com E-mail:[email protected]