∵71- 脉冲模式智能充 电开 关 UBA⒛ 腿 ●元 器 件 卡 片 脉 冲镆 式智 铉 充 电开 奚 UBA2o08 祝 大卫 (北 京智千里科贸公司 ,北 京 1CXn13) 1 接 的电阻确定 概述 REVMOI,(脚 ⒇ :反 向模式控制数字输人 V$(脚 3):接 地端 BAT(脚 4、 5):连 接 电池 飞利 浦公 司推 出的 UBA2∞ 8芯 片是 一 种用于 脉冲模式充电的智能充电开关 IC。 该器件内部集成 了低欧姆阻值的功率开关 ,可 用作单节锂离子电池 或 3节 镍氢电池在预充电模式或快速充电模式下的 过压保护、 热保护和 充电控制。该芯片的电流限制、 (EsD)保 护等集成安全机制可确保其安全 静电放电 操作。UBA⒛Og的 主要特点如下 ●是一种 0.笏 Ω 的低欧姆充电开关 ,带 软开/ : 关切换和可调电流限制 ●带有 0.犭 Ω 的反 向开关和内部 电流限制功 能 ●预充电电流为 13ChA; ; ; ; CHG(脚 6、 7):这 两个 引脚可作为充 电器输人 / 反 向模式输 出引脚 ; CIIGOK-N(脚 sl:充 电器检测输 出。当 /mc小 2.sV时 于 ,如 果 ⅢⅣoMD为 低 ,则 该脚输 出高阻 抗 ;而 当 y粥 小于 旷勰 ,如 果 REVMOD为 高 ,则 该 脚输 出也是高阻抗 。 PWMMOI,(脚 9l:PWM模 式 数 字 输 入 ; MODE(脚 10):充 电模式数字输人。 ; ; ; 3 ' 工作原理 ●具有电池过压和欠压保护功能 ;充 电器过压 保护可到 zOV的 脱扣点 ,反 极性保护可降至 -zClV; UBA⒛ 调 芯片集成 了充 电开关和数字控制 电 ’ 路 ,其 内部结构如图 2所 示。 ●带有过热保护功能 ,内 置门限温度为 150℃ (滞 后温度为 ⒛℃ ); 3.1数 字控制 ; UBAzOOg的 工 作状态依赖于 三 个数字控制信 “ ” 号 ,表 1所 列是其工作状态关系表。 表中的 × 为无 ; 关 ,“ L” 为低电平 ,“ H” 为高电平。 ●可进行充电器检测和内部电流感测 ●EsD性 能符合 EC61OO0-4-2标 准 ●采用 3× 3-IIVsON10封 装 ,具 有优 良的热 性。 2 3.2工 作模式 快速充 电模 式 电路结构及引脚功能 UBA9OOg采 用 10引 脚 lIsVON10(sOTb50-1)封 ・ 装 ,其 引脚排列如图 1所 示。 UBAzOOg的 引脚功能如下 RLlMF(脚 o:该 脚连接一只电阻到地 ,可 用作 快速充电模式的电流限制 。快速充电电流的可调节 范围为 sOmA~从 ,具 体充 电电流可 由该脚外部连 慢充电模式 : CHG CHC CHGOK~N PWMMOD MODE 图 1 UBA⒛ ⒅ ng引 脚排列 曾 图 21lBAoOB的 内部结构框 图 ⒛“ 年第9期 《8舛 电号兖乎件》 -72- 表 MODE PWMMOD REVMOD 高温 高 电池 电压 (卩 郎4/5) 1 工 作状态 )HGoK- V:AT N(脚 (脚 10) (脚 9) (脚 2) × × × yes × × × × × × yes × × H × × × L × L × L no H L L L L H L L no × H H no no × H H no no no no 功能 电流方 向 关闭 开关高电阻 开关高电阻 none 关闭 关断 开关高电阻 none none 电流源 充 电器 至 电池 开关低 电阻 充 电器至 电池 × 反向 开关低 电阻 电池 至充 电器 × 关闭 开关 高 电阻 none 反向和慢充电 电流源 充 电器 至 电池 反 向和慢充 电 开关低 电阻 电池 至充 电器 反 向和慢充 电 开关 高 电阻 none H no L L H no H L L H no H H L H H L H H L H × no L × H yes H no 反向和快充电 开关低 电阻 充 电器至 电池 反向和快充电 开关低 电阻 电池 至充 电器 反 向和快充 电 开关高电阻 外接电阻来调节 ,范 围为 sOmA~从 。而当 BAT脚 电 压增加到最大电池电压以上或芯片结温太高时 ,快 速充电模式停止。 当脚 REVMOD和 PWMMODE上 的输人信号被 拉高时 ,反 向模式开关被触发。通过反向模式开关 的电流由电流限制电路监视。当反向模式开关电流 超过设定电流限制时 ,电 流限制电路将减小驱动电 压 ,以 保持恒流特性 。当 Ⅴ唧小于 2。 γ 时 ,反 向模式 自动截止并恢复到关闭模式 。 当 UBA⒛ 阴 的脚 CHG连 接到充电器时 ,反 向慢 充 电模式相 当于慢充 电模式 。而当无充 电器 出现 时 ,电 路则等效于反向模式。 当充电器连接到 CHG脚 时 ,反 向快速充电模式 与快速充电模式相当。而当充电器不出现时 ,反 向 VBAT(orBATⅤ OLT) 当 脚 MODE为 高 电 平 而 脚 PWMMOD及 REVMOD为 低 时 ,电 路 主机控制器 此 时 流过 开关 的 进人快 速充 电模 式 。 电流可 由电流 限制 电路 来 进 行 监 视 :其 限流值可通过脚 RLEMF上 的 none 开关 高 电阻 L UBAzOO8的 工作模式包括关断 (oFF)模 式、关 慢充和快充电模式 (反 向模式 闭 (sIImOwN)模 式、 和反向慢充及快充电模式。 在关断模式下 ,充 电器与电池之间的电流通路 完全被断开 ,IC内 部所有电路截止 ,电 池不被加 载。当脚 REVMOD为 低而脚 PWMMOD为 高 ,或 脚 REVMOD为 低 而 脚 CHGOKˉ N为 高 时 ,UBAzOOs进 人 关断模式。 关闭模式时 ,脚 BAT与 脚 CHG之 间的充电通路 将被断开 。电路将在 以下三种情 况 下进入关 闭状 态 :第 一是在脚 BAT上 检测到过电压时 ;第 二是在 反向模式时 ,脚 BAT上 出现欠电压。第三是在芯片 过热时。一般情况下 ,过 电压关闭可通过拔出充电 器墙上插头来复位。 当输 人 脚 MODE、 PWMMOD和 充电器 + REVMOD上 的电压为低电平 ,且 充电 墙上插头 器输入电压至少是 2。 W和 ⅤmIGk于 V洲时 ,电 路将进人慢充电模式。此 而当 时电池上将施加一个恒定电流 。 BAT脚 电压超过最大 电池 电压或芯 片温度过高时 ,慢 充电模式停止。 模式 关断 L no >3.1Ⅴ 慢充 电 ′ 电 决充 L no 8) ⒛∝年 9月 图 3 UBAzOOs应 用 电路 图 ‘ — ˉ — — — — '一 快速充电模式等效于反向模式。当电流从充 电器流 向电池时 ,电 流限制可以通过 UBAzOOg脚 RLlMF上 的外接电阻来调节 ,范 围为 sOmA~从 。 通过 UBA⒛OB脚 CHG的 电流 一 关具有软开关特性 。 般不是 突然增加到设定值 (1A)的 ,而 是呈近似线性 4 在慢充 电和快速充 电模式下 ,电 流从充 电器流 向电池 。而在反 向模式下 ,电 流则从 电池流 向充 电 应 用 电路 UBA⒛ 调 充 电开关芯片与 PCFsObO1和 主控制 器的电路连接如图 3所 示。UBA⒛ Og内 部的充电开 关与反向开关连接于充电器输人端 (脚 CHG)和 BAT 脚之间 ,开 关的工作状态可由 UBA2∞ 8的 脚 2、 脚 9 和脚 10上 的数字控制输人来决定。这种智能充电开 关 系缓慢增加 。 器 。UI认 ⒛OS脚 1上 的接地 电阻 RRwi可 用于设置快 速充 电限制 电流 (50mA~丛 )。 脚 1上 的电压 yMI,与 通过开关 的电流 r掘成 正 比。 收稿 日期 :∝pl~O3-O3 咨询编号 :00Ogas INTEGRATED CIRCUITS DATA SHEET UBA2008 Charge switch Product specification 2003 Oct 01 Philips Semiconductors Product specification Charge switch UBA2008 CONTENTS 10 CHARACTERISTICS 11 APPLICATION INFORMATION Application diagram Soft switching Current measurement possibility 1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 11.1 11.2 11.3 4 ORDERING INFORMATION 12 PACKAGE OUTLINE 5 BLOCK DIAGRAM 13 SOLDERING 6 PINNING 13.1 7 FUNCTIONAL DESCRIPTION 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 Control OFF mode SHUTDOWN mode SLOW CHARGE mode FAST CHARGE mode REVERSE mode REVERSE and SLOW CHARGE mode REVERSE and FAST CHARGE mode Introduction to soldering surface mount packages Reflow soldering Wave soldering Manual soldering Suitability of surface mount IC packages for wave and reflow soldering methods 8 LIMITING VALUES 9 THERMAL CHARACTERISTICS 2003 Oct 01 13.2 13.3 13.4 13.5 2 14 DATA SHEET STATUS 15 DEFINITIONS 16 DISCLAIMERS Philips Semiconductors Product specification Charge switch 1 UBA2008 FEATURES 2 • Very low ohmic charge switch (0.25 Ω) with soft switching and adjustable current limitation APPLICATIONS • Charging circuits. • Very low ohmic reverse switch (0.25 Ω) with built-in current limitation 3 GENERAL DESCRIPTION The UBA2008 is an intelligent charge switch IC for pulse mode charging applications. With its integrated low ohmic power switch it is designed for charging of 1-cell Li-Ion or 3-cell NiMH batteries in either a pre-charge or fast charge mode. The reverse mode of the UBA2008 allows the supply of accessories connected to the charger pin. Several integrated safety mechanisms such as current limitation, overvoltage protection, thermal protection and ESD guarantee fail-safe operation. • 130 mA pre-charge current • Battery overvoltage and undervoltage protection • Charger overvoltage protection of up to +20 V and reverse polarity protection down to −20 V • On-chip thermal protection • Charger detection • Built-in current sensing • Small 3 × 3 mm HVSON10 package with excellent thermal properties • The UBA2008 is qualified according to the IEC 61000-4-2 standard for ESD performance. 4 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UBA2008TK/N2 2003 Oct 01 HVSON10 DESCRIPTION plastic thermal enhanced very thin small outline package; no leads; 10 terminals; body 3 × 3 × 0.85 mm 3 VERSION SOT650-1 Philips Semiconductors Product specification Charge switch 5 UBA2008 BLOCK DIAGRAM handbook, full pagewidth CHG CHG fast charge mode 6 4 5 7 reverse mode BAT BAT slow charge mode fast charge mode current limit CHGOK_N MUX CHG 6V BAT Tmax PWMMOD REVMOD REVMOD BAT temp MODE 1 8 CHG DIGITAL CONTROL 2.5 V 10 UBA2008 9 2 3 MRC318 VSS Fig.1 Block diagram. 2003 Oct 01 4 RLIMF Philips Semiconductors Product specification Charge switch 6 UBA2008 PINNING SYMBOL PIN DESCRIPTION RLIMF 1 FAST CHARGE mode current limiting resistor; output current source REVMOD 2 REVERSE mode control; see Table 1 for operating modes; digital input VSS 3 ground BAT 4 battery pin; power input/output BAT 5 battery pin; power input/output CHG 6 charger input/REVERSE mode output; power input/output CHG 7 charger input/REVERSE mode output; power input/output CHGOK_N 8 charger detection output; if REVMOD is LOW, the output is in high-impedance state when VCHG < 2.5 V; if REVMOD is HIGH the output is in high-impedance state when VCHG < VBAT; open drain output PWMMOD 9 PWM mode input; see Table 1 for operating modes; digital input 160 kΩ pull-down MODE 10 charge mode input; see Table 1 for operating modes; digital input 160 kΩ pull-down handbook, halfpage BAT 5 6 CHG BAT 4 7 CHG VSS 3 8 CHGOK_N REVMOD 2 9 PWMMOD RLIMF 1 10 MODE UBA2008TK terminal 1 index area MRC319 This diagram is a bottom view For mechanical specification of HVSON10 package, see Chapter 12. Fig.2 Pin configuration. 2003 Oct 01 5 Philips Semiconductors Product specification Charge switch 7 UBA2008 FUNCTIONAL DESCRIPTION 7.1 Control The functionality of the UBA2008 is determined by the state of the three digital control signals and the status of the protection circuits as shown in Table 1. The digital control signals MODE and PWMMOD have an internal pull-down resistor to define the state of the input pins when the controlling circuit is not operational. Table 1 UBA2008 operation state as function of the digital control signals; note 1 MODE PWM MOD REV MOD HIGH TEMP HIGH BAT CHGOK_N VBAT > 3.1 V X X X yes X X X SHUTDOWN switch high ohmic none X X X X yes X X SHUTDOWN switch high ohmic none X X L no no H X OFF switch high ohmic none X H L no no X X OFF switch high ohmic none L L L no no L X SLOW CHARGE current source charger to battery H L L no no L X FAST CHARGE switch low ohmic charger to battery X H H no no X yes REVERSE switch low ohmic battery to charger X H H no no X no SHUTDOWN switch high ohmic none L L H no no L X REVERSE and SLOW CHARGE current source charger to battery L L H no no H yes REVERSE and SLOW CHARGE switch low ohmic battery to charger L L H no no H no REVERSE and SLOW CHARGE switch high ohmic none H L H no no L X REVERSE and FAST CHARGE switch low ohmic charger to battery H L H no no H yes REVERSE and FAST CHARGE switch low ohmic battery to charger H L H no no H no REVERSE and FAST CHARGE switch high ohmic none Notes 1. X = don’t care; L = LOW voltage level; H = HIGH voltage level. 2. Currents in the other direction are blocked. 2003 Oct 01 6 MODE FUNCTION CURRENT DIRECTION(2) Philips Semiconductors Product specification Charge switch 7.2 UBA2008 The current limit is adjustable, from 50 mA to 2 A, through an external resistor connected to the RLIMF pin. The voltage on RLIMF is proportional to the current flowing through the switch (see Section 11.3). OFF mode In the OFF mode the current path between charger and battery is fully switched off. In addition all internal circuitry is switched off. The battery is not loaded by the UBA2008 in this situation. The FAST CHARGE mode is stopped when the voltage on the BAT pin increases above the maximum battery voltage or when a too high die temperature occurs. The OFF mode is entered if: • REVMOD is LOW and PWMMOD is HIGH • REVMOD is LOW and CHGOK_N is HIGH. Attention: RLIMF cannot trim the current limit while in SLOW CHARGE or REVERSE modes. 7.3 Remark: The dissipation inside the UBA2008 will increase strongly when the current limitation is activated, this might lead to activation of the thermal protection. SHUTDOWN mode The SHUTDOWN mode corresponds to switching off the charging path between the pins BAT and CHG. The circuit will enter the SHUTDOWN mode in the following cases: 7.6 • Overvoltage detected on pin BAT The REVERSE mode switch is activated when the REVMOD and PWMMOD input signals are pulled HIGH. • Undervoltage detected on pin BAT while in REVERSE mode The current through the REVERSE mode switch is monitored by the current limiting circuit. This current limiting circuit reduces the drive voltage for the REVERSE mode switch when the current exceeds the set current limit resulting in a constant current behaviour of the REVERSE mode switch. • Overheat detected on the die. In the case of overvoltage shutdown, the state is latched internally and can be reset only by disconnecting the charger wall plug. 7.4 SLOW CHARGE mode When VBAT < 2.7 V the REVERSE mode is automatically disabled and the UBA2008 returns to SHUTDOWN mode (see Fig.3). In the SLOW CHARGE mode a constant current is applied to the battery. SLOW CHARGE mode is entered when the MODE and PWMMOD and REVMOD input pins are made LOW, the charger input voltage is at least 2.5 V and VCHG > VBAT. Remark: The dissipation inside the UBA2008 will increase strongly when the current limitation is activated, this might lead to activation of the thermal protection. The SLOW CHARGE mode is stopped when the voltage on the BAT pin increases above the maximum battery voltage or when a too high die temperature occurs. 7.5 7.7 REVERSE and SLOW CHARGE mode The REVERSE and SLOW CHARGE mode corresponds to the SLOW CHARGE mode if a charger is connected to pin CHG. When no charger is present, this mode is equivalent to the REVERSE mode. FAST CHARGE mode In the FAST CHARGE mode the switch (see Fig.1) is turned on slowly by the internal circuitry. The FAST CHARGE mode is entered when the MODE input signal is HIGH and the PWMMOD and REVMOD input signals are LOW. 7.8 REVERSE and FAST CHARGE mode The REVERSE and FAST CHARGE mode corresponds to the FAST CHARGE mode if a charger is connected to pin CHG. When no charger is present, this mode is equivalent to the REVERSE mode. When the current flows from the charger to the battery, the current limit can be adjusted from 50 mA to 2 A, using the external resistor RRLIMF. The current through the switch is monitored by the current limiting circuit. When this current exceeds the predefined current limit, it is kept constant by reducing the drive voltage of the switch. 2003 Oct 01 REVERSE mode 7 Philips Semiconductors Product specification Charge switch UBA2008 handbook, full pagewidth VBAT (V) hysteresis (VBAT(rev)(hys)) <3.1 V >2.7 V REVERSE mode SHUTDOWN mode REVERSE mode t MRC314 Fig.3 Reverse mode behaviour as a function of VBAT. 2003 Oct 01 8 Philips Semiconductors Product specification Charge switch UBA2008 8 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCHG charger voltage −20 +20 V VBAT, VRLIMF battery voltage and voltage on pin RLIMF −0.5 +6 V IBAT(max), ICHG(max) maximum current through pins BAT and CHG − 2.5 A VMODE, VPWMMOD, VREVMOD, VCHGOK_N voltage on pins MODE, PWMMOD, REVMOD and CHGOK_N −0.5 +5 V II input current at any input −10 +10 mA IO output current at any output −10 +10 mA Tamb ambient temperature −40 +85 °C Tstg storage temperature −55 +150 °C Vesd electrostatic discharge voltage JEDEC standard class 2; all pins HBM; note 1 − ±2500 V MM; note 2 − ±200 V CD (LVL2); note 3 − ±4000 V AD (LVL3); note 4 − ±8000 V IEC 61000-4-2 standard; pins BAT and CHG Notes 1. Human Body Model: equivalent to discharging a 100 pF capacitor via a 1.5 kΩ resistor. 2. Machine model: equivalent to discharging a 200 pF capacitor via a 0 Ω resistor. 3. Contact Discharge (Level 2): equivalent to discharging, through contact, a 150 pF capacitor via a 330 Ω resistor. 4. Air Discharge (Level 3): equivalent to discharging, through the air, a 150 pF capacitor via a 330 Ω resistor. 9 THERMAL CHARACTERISTICS SYMBOL Rth(j-c) PARAMETER thermal resistance from junction to case CONDITIONS note 1 VALUE UNIT 22(2) K/W Notes 1. HVSON10 is mounted to a water-cooled heatsink with the topside of the package. Package is mounted to a 4-layer printed-circuit board and exposed to still air. 2. For a typical printed-circuit board of a handset the total thermal resistance will be higher. For correct operation up to 85 °C ambient temperature the total thermal resistance must not exceed 100 K/W. 2003 Oct 01 9 Philips Semiconductors Product specification Charge switch UBA2008 10 CHARACTERISTICS VSS = 0 V; Tamb = −40 to +85 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP.(1) MAX. UNIT Charge switch VCHG charger input voltage note 2 −20 − +20 V VBAT battery input voltage note 3 0 − 6.0 V IBAT current through pin BAT OFF mode; VBAT = 5 V; VCHG = 0 V − 5 10 µA SHUTDOWN after overheat − 15 30 µA SHUTDOWN after overvoltage − − 1 mA SHUTDOWN after undervoltage − − 20 µA SLOW CHARGE mode; VBAT = 5 V; VCHG = floating − 5 10 µA REVERSE mode; ICHG = 0 A; VBAT > 3.1 V − 90 150 µA OFF mode and SHUTDOWN − mode; VCHG = 2.5 V to 10.5 V; VBAT = 0 V to 5.7 V − 400 µA OFF mode and SHUTDOWN mode; VCHG = 12 V to 20 V; VBAT = 0 V to 5.7 V − − 5 mA FAST CHARGE mode; IBAT = 0 A; VCHG = 3.6 V − − 140 µA ICHG current through pin CHG ICHG(det) minimum charge current detection REVMOD = HIGH; ICHG → BAT; note 4 − 0.1 4 mA VCHG(det) minimum charge voltage detection REVMOD = LOW; note 3 1.1 2 2.5 V ICHG(slow) slow charge current VCHG > VBAT + 1 V VCHG = 2.5 V to 7 V 120 145 180 mA VCHG = 7 V to 20 V 90 140 190 mA ICHG(fast)(lim) current limit of the fast charge current MODE = HIGH; PWMMOD = LOW; ICHG(fast) = 50 mA to 2 A; note 5 −30 − +10 % VRLIMF(acc) absolute accuracy of voltage sensed on pin RLIMF ICHG(fast) = 1.25 A; notes 6 and 7 −10 − +30 % VRLIMF(lin) linearity of voltage sensed on pin RLIMF ICHG(fast) = 1.25 A; notes 6 and 7 −10 − +10 % Ilim(rev) current limit REVERSE mode note 8 450 700 950 mA VBAT(rev) minimum battery voltage for REVERSE mode activation including hysteresis 2.7 − 3.1 V VBAT(rev)(hys) VBAT(rev) hysteresis − 200 − mV 2003 Oct 01 10 Philips Semiconductors Product specification Charge switch SYMBOL UBA2008 PARAMETER CONDITIONS MIN. TYP.(1) MAX. UNIT − 0.22 0.36 V voltage between pins BAT and IBAT = 0.4 A; VBAT = 3.6 V CHG in REVERSE mode 0.1 0.2 0.25 V Irev(slow) reverse current in SLOW CHARGE mode MODE = LOW; PWMMOD = LOW; VCHG = 0 V − − 5 µA Irev(fast) reverse current in FAST CHARGE mode MODE = HIGH; PWMMOD = LOW; VCHG = 0 V − − 5 µA Irev(rev) reverse current in REVERSE mode PWMMOD = HIGH; REVMOD = LOW; VBAT = 0 V − − 5 µA ∆I/∆ton(fast) soft switching on in FAST CHARGE mode ICHG ramps up from 0 A to 2 A; 0.2 note 9 − 3 A/ms ∆I/∆toff(fast) switching off in FAST CHARGE mode ICHG ramps down from 2 A to 0 A; note 9 20 − 80 A/ms ∆I/∆ton(rev) soft switching speed in REVERSE mode VBAT > 3.2 V, ICHG ramps up from 0 A to 0.4 A; note 9 0.5 − 5 A/ms ∆I/∆toff(rev) switching off in REVERSE mode VBAT > 3.2 V, ICHG ramps 10 down from 0.4 A to 0 A; note 9 40 80 A/ms Emax maximum energy dissipation capability of the CHG pin note 10 VCHG-BAT(fast) voltage between pins CHG and BAT in FAST CHARGE mode VBAT-CHG(rev) ICHG = 0.9 A during fast switch off; note 11 − − 1 mJ during smooth switch off − − 2 mJ Ptot total power dissipation note 12 − − 600 mW VBAT(max) detection threshold to disable charging notes 8 and 13 5.3 5.5 5.7 V − − 500 µA CHGOK_N output IOL maximum output current VOL maximum output voltage with output current = IOL − − 200 mV ILOZ leakage current in high-impedance VO = 5 V − − 1 µA Control inputs: pins MODE, PWMMOD and REVMOD VIH HIGH-level input voltage 1.4 − 5 V VIL LOW-level input voltage 0 − 0.4 V 100 200 300 kΩ − − 1 µA CONTROL INPUTS: PINS MODE AND PWMMOD Rpd pull-down resistor CONTROL INPUT: PIN REVMOD IIL 2003 Oct 01 LOW-level input current VIN = 0 V 11 Philips Semiconductors Product specification Charge switch SYMBOL UBA2008 PARAMETER CONDITIONS MIN. TYP.(1) MAX. UNIT Temperature high sensor Tmax maximum die temperature 135 150 165 °C Thys hysteresis temperature 15 20 25 °C Notes 1. Values are specified at Tamb = 25 °C, VCHG = 6 V, VBAT = 3.6 V, unless specified differently. They are validated by product characterization based on measurements on sample basis. 2. If VCHG < 0 V (OFF mode) it is guaranteed that the battery stays completely protected and the discharge current is maximum 10 µA. 3. For proper operation VCHG > 2.5 V or VBAT > 2.5 V. 4. When ICHG = 0 A and REVMOD = HIGH then CHGOK_N = HIGH. 500 5. RRLIMF can be approximated with this equation: R RLIMF = ------------------------------ . I CHG(fast)(lim) I CHG × R RLIMF 6. VRLIMF can be approximated with this equation: V RLIMF = -----------------------------------. 1000 7. Test is done for 3 currents: 50 mA, 450 mA and 900 mA. 8. Contact Philips Semiconductors if a different value is required. 9. Values are measured between 10 % and 90 %. 10. The voltage peak due to inductive flyback is clamped internally at 30 V. This will not damage the IC when the dissipated energy does not exceed the specified value. 11. Fast switch off occurs for overvoltage condition on pin BAT. 12. For a typical printed-circuit board of a handset with a total (printed-circuit board + package) thermal resistance of 100 K/W and 85 °C ambient temperature. 13. To reset the overvoltage protection state it is required to unplug the charger wall plug (VCHG < 2.5 V). 2003 Oct 01 12 Philips Semiconductors Product specification Charge switch UBA2008 11 APPLICATION INFORMATION 11.1 Application diagram handbook, full pagewidth (1) ACCESSORIES CHARGER WALL PLUG CHG 6 CHG 7 10 9 8 MODE PWMMOD AUXON CHGOK_N VBAT (or BATVOLT) RLIMF 1 PCF50601 xxVIN UBA2008 yyVIN I2C-bus 4 2 5 BAT REVMOD GPIOx GPIOx BAT GPIOx HOST CONTROLLER MRC320 An external capacitor can be added on VCHG (typically 10 nF) to prevent any oscillation of the pre-charge current. This applies only when using a linear charger. Fig.4 UBA2008 in combination with the PCF50604 PMU. 11.2 Soft switching MGX395 handbook, full pagewidth T PWMMOD Ch1 2.00 V Limit set to 1 A (1) I CHG Ch4 500 mA/Ω 200 µs/div. (1) Limit is set by selecting RRLIMF Fig.5 Soft switching sequence (MODE = LOW). 2003 Oct 01 13 Philips Semiconductors Product specification Charge switch 11.3 UBA2008 Current measurement possibility handbook, full pagewidth VRLIMF (mV) MRC316 500 10 450 8 400 6 Nonlinearity (%) 4 350 (1) 2 300 0 250 −2 200 −4 (2) 150 −6 100 −8 50 −10 0 0 200 400 600 800 1000 (1) Non linearity in %. (2) VRLIMF as function of ICHG; RRLIMF = 250 Ω. Fig.6 Linear behaviour. 2003 Oct 01 14 1200 1400 1600 ICHG (mA) 1800 −12 Philips Semiconductors Product specification Charge switch UBA2008 12 PACKAGE OUTLINE HVSON10: plastic thermal enhanced very thin small outline package; no leads; 10 terminals; body 3 x 3 x 0.85 mm SOT650-1 0 1 2 mm scale X A B D A A1 E c detail X terminal 1 index area C e1 terminal 1 index area e 5 y y1 C v M C A B w M C b 1 L Eh 6 10 Dh DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D(1) Dh E(1) Eh e e1 L v w y y1 mm 1 0.05 0.00 0.30 0.18 0.2 3.1 2.9 2.55 2.15 3.1 2.9 1.75 1.45 0.5 2 0.55 0.30 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT650-1 --- MO-229 --- 2003 Oct 01 15 EUROPEAN PROJECTION ISSUE DATE 01-01-22 02-02-08 Philips Semiconductors Product specification Charge switch UBA2008 To overcome these problems the double-wave soldering method was specifically developed. 13 SOLDERING 13.1 Introduction to soldering surface mount packages If wave soldering is used the following conditions must be observed for optimal results: This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. • For packages with leads on two sides and a pitch (e): There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. 13.2 – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. Reflow soldering The footprint must incorporate solder thieves at the downstream end. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical reflow peak temperatures range from 215 to 270 °C depending on solder paste material. The top-surface temperature of the packages should preferably be kept: Typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 °C or 265 °C, depending on solder material applied, SnPb or Pb-free respectively. • below 220 °C (SnPb process) or below 245 °C (Pb-free process) A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. – for all BGA and SSOP-T packages 13.4 – for packages with a thickness ≥ 2.5 mm Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. – for packages with a thickness < 2.5 mm and a volume ≥ 350 mm3 so called thick/large packages. • below 235 °C (SnPb process) or below 260 °C (Pb-free process) for packages with a thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Moisture sensitivity precautions, as indicated on packing, must be respected at all times. 13.3 Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. 2003 Oct 01 Manual soldering 16 Philips Semiconductors Product specification Charge switch 13.5 UBA2008 Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE(1) WAVE BGA, LBGA, LFBGA, SQFP, SSOP-T(3), TFBGA, VFBGA not suitable suitable(4) DHVQFN, HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, HVSON, SMS not PLCC(5), SO, SOJ suitable REFLOW(2) suitable suitable suitable not recommended(5)(6) suitable SSOP, TSSOP, VSO, VSSOP not recommended(7) suitable PMFP(8) not suitable LQFP, QFP, TQFP not suitable Notes 1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 3. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package body peak temperature must be kept as low as possible. 4. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 5. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 6. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 7. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 8. Hot bar or manual soldering is suitable for PMFP packages. 2003 Oct 01 17 Philips Semiconductors Product specification Charge switch UBA2008 14 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 15 DEFINITIONS 16 DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Oct 01 18 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613502/01/pp19 Date of release: 2003 Oct 01 Document order number: 9397 750 11503 UBA2007/2008 Intelligent charge switches for charging circuit applications Small, fail-safe charge switch solutions for charging applications in handheld products. Semiconductors Developed for charging circuit applications, the Philips UBA2007 and UBA2008 are intelligent charge switches used between the charger input and the battery. The UBA2007 and UBA2008 offer the same integrated features – a low-ohmic, bi-directional switch and a constant current source – but are designed for use with different Philips products. The UBA2007 is recommended for use with the PCF50604 power management unit (PMU), while the UBA2008 is typically used as a stand-alone device controlled by the host controller. Depending on the control signals, the UBA2007/8 can perform either as a low-ohmic switch or as a current source. As a low-ohmic switch, the device controls current - from the charger to the battery, or from the Key features battery to the charger - with soft switching and built-in current limitation. • One integrated low-ohmic fast charge switch (charger-to-battery) An external resistor can be used to adjust the current limit of the fast- with soft switching and adjustable current limitation (50 mA to 2 A). charge switch. Also, by measuring the voltage drop over the external One integrated low-ohmic reverse mode switch (battery-to-charger) resistor, precise information on the charge current can be obtained. As with current limitation (600 mA). a constant current source, the UBA2007/8 provides current from the One integrated constant current source (charger-to-battery) charger to the battery, and can be used to pre-charge empty batteries. • • for slow charging or top-off charging (130 mA). • Fail-safe operation through current limitation, over-voltage protection Several integrated features prevent electrical malfunction and guarantee of battery, and thermal protections fail-safe operation. On the charger side, there is an over voltage (to 20 V), • Output for precise current measurement and a reverse voltage (to -20 V) protection. Built-in protection circuitry • Open drain charger detection output limits voltage when the battery is taken off-line during charging. Internal • Small-footprint HVSON10 package (3x3 mm2) protection logic safeguards against erroneous control signals. Internal • UBA2007 used with PCF50604 PMU temperature protections prevent damage caused by overload or current • UBA2008 used as stand-alone charge switch limitation conditions. UBA2007/UBA2008 Intelligent charge switches for charging circuit applications www.semiconductors.philips.com UBA2007 application diagram with PCF50604 ������� �������� UBA2008 application for stand-alone use + ������� �������� ����������� − ��� ��� + ����������� − ��� ��� ������ ������ ����� ������ ����� ����� ���� ����� ���� ����������������� ����� ����������������� ����� ����� ������� ��� ����� ����� ������� �������� ����� ����� ��� ��� ��� ������ ��� ����� ��� ���� ���������� ��� ������ ����� ����� ����� MSD917 ���� ���������� MSD918 Philips Semiconductors Philips Semiconductors is a worldwide company with over 100 sales offices in more than 50 countries. For a complete up-to-date list of our sales offices please e-mail [email protected]. A complete list will be sent to you automatically. You can also visit our website http://www.semiconductors.philips.com/sales. © Koninklijke Philips Electronics N.V. 2002 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: July 2002 Document order number: 9397 750 09936 Published in The Netherlands