WTN1A80 Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:800V ■ R.M.S On-State Current(IT(RMS)=1A ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: IDRM=500uA@TC=125℃ ■ Low holding current: IH=4mA (typ.) ■ High Commutation dV/dt. General Description General purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) symbol Parameter condition Ratings Units 800 V 1 A 12.5/13.8 A I 2t 1.28 A2s Peak Gate Power Dissipation 5.0 W Average Gate Power Dissipation 0.5 W IGM Peak Gate Current 2.0 A VGM Peak Gate Voltage 5 V 125 ℃ -40~150 ℃ VDRM Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current Tc=86℃ ITSM Surge On-State Current Full sine wave, 20/16.7ms I2t PGM PG(AV) TJ TSTG Operating Junction Temperature Storage Temperature Thermal Characteristics Symbol RθJc Parameter Thermal Resistance Junction to Case Rev.A Aug.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Value 60 Units ℃/W WTN1A80 Electrical Characteristics(Tc=25℃ unless otherwise noted) Symbol Items Ratin conditions Repetitive Peak Off-State Typ Max - 0.1 0.5 mA - 1.2 1.5 V T2+G+ - 0.4 5 T2+G- - 1.3 5 T2-G- - 1.4 5 T2-G+ - 3.8 7 T2+G+ - - 1.5 T2+G- - - 1.5 T2-G- - - 1.5 T2-G+ - - 1.5 0.2 - - V 10 20 - V/µs - 1.3 5 mA T2+G+ - 1.2 5 T2+G- - 4.0 5 T2-G- - 1.0 8 T2-G+ - 2.5 5 - 2 - VD=VDRM,Single Phase, Half IDRM Wave TJ=125℃ Current VTM IGT VGT VGD dv/dt Unit Min Peak On-State Voltage IT=35A,Inst.Measurement Gate Trigger Current VD=12V,RL=100Ω Gate Trigger Voltage mA Non-Trigger Gate Voltage TJ=125℃,VD=VDRM,RL=3.3KΩ Critical VD=67%VDRM(MAX) Rate of V VD=12V,RL=100Ω Rise TJ=125℃,RGK=1KΩ Off-State Voltage at Commutation IH IL Holding Current VD=12V, IGT=0.1A Latching current VD=12V,IGT=0.1A mA ITM=1.5A,VDM=VDRM(MAX), tgt Gate controlled turn-on time µs IG=0.1A,dIG/dt=5A/µs 2/4 Steady, keep you advance WTN1A80 Fig1. Ptot - IT(RMS) Fig.2 ITSM - tP Fig.3 IT(RMS) - Tmb Fig.4 IT(RMS) - ts Fig.5 IGT(Tj)/IGT(25℃) -Tj Fig.6 VTM -IT 3/4 Steady, keep you advance WTN1A80 92 Package Dimension TOTO-92 Unit:mm 4/4 Steady, keep you advance