VISHAY 1N4448WS-V_12

1N4448WS-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• These diodes are also available in other
case styles including the DO-35 case
with the type designation 1N4448, the
MiniMELF case with the type designation
LL4448, and the SOT-23 case with the
type designation IMBD4448-V
• Silicon Epitaxial Planar Diode
• Fast switching diodes
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD-323
Weight: approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4448WS-V
Ordering code
Type Marking
Remarks
1N4448WS-V-GS18 or 1N4448WS-V-GS08
A3
Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VR
75
V
VRM
100
V
f ≥ 50 Hz
IF(AV)
150 1)
mA
t < 1 s and Tj = 25 °C
IFSM
350
Reverse voltage
Peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge forward current
Ptot
Power dissipation
1)
200
1)
mA
mW
Valid provided that electrodes are kept at ambient temperature.
Document Number 81387
Rev. 1.1, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
1N4448WS-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJA
Thermal resistance junction to ambient air
Value
Unit
1)
K/W
650
Junction temperature
Tj
150
°C
Storage temperature
Tstg
- 65 to + 150
°C
1)
Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Leakage current
Test condition
Symbol
Min.
IF = 5 mA
VF
620
IF = 100 mA
VR = 20 V
Typ.
Max.
Unit
720
mV
VF
1000
mV
IR
25
nA
VR = 75 V
IR
5
µA
VR = 20 V, Tj = 150 °C
IR
50
µA
VF = VR = 0 V
CD
4
pF
Reverse recovery time
IF = 10 mA, IR = 1 mA, VR = 6 V,
RL = 100 Ω
trr
4
ns
Rectification efficiency
f = 100 MHz, VRF = 2 V
ην
Diode capacitance
0.45
Rectification Efficiency Measurement Circuit
60 Ω
2 nF
VRF = 2 V
5 kΩ
VO
17436
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 81387
[email protected], [email protected], [email protected]
Rev. 1.1, 12-Aug-10
1N4448WS-V
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C, unless otherwise specified)
103
Tj = 25 °C
1.1
1.0
CD (VR)
1
CD (0 V)
Tj = 25 °C
10
IF (mA)
f = 1 MHz
Tj = 100 °C
102
0.9
0.8
10- 1
0.7
10- 2
0
1
2
Figure 1. Forward Characteristics
104
0
17440
VF (V)
18105
8
10
5
2
103
103
5
5
2
2
IR (nA)
Rf (Ω)
6
VR (V)
104
f = 1 kHz
2
4
Figure 4. Relative Capacitance vs. Reverse Voltage
Tj = 25 °C
5
2
102
5
102
5
2
2
10
10
5
5
VR = 20 V
2
2
1
10-2
10-1
1
17438
102
10
IF (mA)
Figure 2. Dynamic Forward Resistance vs. Forward Current
0
17441
100
200
Tj (°C)
Figure 5. Leakage Current vs. Junction Temperature
Ptot - Power Dissipation (mW)
250
200
150
100
50
0
0
20324
50
100
150
200
Tamb - Ambient Temperature (°C)
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Document Number 81387
Rev. 1.1, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
1N4448WS-V
Vishay Semiconductors
100
5
4
3
2
I
IFRM (A)
1
T = 1/fP
IFRM
10
5
4
3
2
n = tP/T
tP
n=0
t
T
0.1
0.2
0.5
5
4
3
2
0.1
10-5
2
5
10-4
2
5
10-3
2
5
10-2
2
5
10-1
2
5
1
2
5
10
tP (s)
17442
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
0.1 (0.004) max.
0° to 8
°
0.15 (0.006)
0.10 (0.004)
0.2 (0.008)
0.8 (0.031)
1.15 (0.045)
Package Dimensions in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
2.50 (0.098)
1.1 (0.043)
2.85 (0.112)
1.5 (0.059)
0.40 (0.016)
0.20 (0.008)
Cathode bar
Foot print recommendation:
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
www.vishay.com
4
1.6 (0.063)
0.6 (0.024)
0.6 (0.024)
0.6 (0.024)
For technical questions within your region, please contact one of the following: Document Number 81387
[email protected], [email protected], [email protected]
Rev. 1.1, 12-Aug-10
Legal Disclaimer Notice
www.vishay.com
Vishay
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Revision: 12-Mar-12
1
Document Number: 91000