WCD4C60S on Con Silic ilico onttrolled Rec Recttifie ierrs Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ Low On-State Voltage (1.6V(Typ.) @ ITM) General Description Sensitive gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. ngs (TJ= 25°C unless otherwise specified) Absolute Max axiimum Rati tin Parameter Symbol Condition Repetitive Peak Off-State Voltage VDRM Ratings 600 Average On-State Current(180° Ti =60 °C 1.35 Conduction Angle) Tamb=25 °C 0.9 R.M.S On-State Current(180° Ti =60 °C Conduction Angle) Tamb=25 °C Units V A IT(AV) 4 A IT(RMS) 1.35 1/2 Cycle, 60Hz, Sine Wave Surge On-State Current ITSM 33 A Non-Repetitive I2t I2t for Fusing t =10ms 4.5 A2s di/dt Critical rate of rise of on-state current F=60Hz,Tj=125 °C 50 A/㎲ PGM Forward Peak Gate Power Dissipation 0.5 W 0.2 W 1.2A A Forward Average Gate Power PG(AV) Tj=125 °C Dissipation IFGM Forward Peak Gate Current TJ Operating Junction Temperature -40~125 °C °C TSTG Storage Temperature -40~150 °C °C Thermal Characteristics Symbol Parameter Value Units RθJc Thermal Resistance Junction to Case(DC) 15 ℃/W RθJA Thermal Resistance Junction to Ambient(DC) 100 ℃/W Jan 2009 .Rev .0 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WCD4C60S Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter IDRM Repetitive Peak Off-State Current VTM Peak On-State Voltage (1) IGT Gate Trigger Current (2) Test Conditions Value Units Min Typ Max - - 5 μA - - 1 mA - - 1.8 V 20 - 80 μA - - 0.8 V VAK=VDRM RGK=1KΩ ITM=8A, tp=380㎲ VD=12V,RL=140 VGT Gate Trigger Voltage (2) VGD Non-Trigger Gate Voltage (1) VD=12V,RL=3.3KΩ, RGK=1 KΩ 0.1 dv/dt Critical Rate of Rise Off-State Voltage VD=67%VDRM, RGK=1 KΩ 15 - - V/㎲ IH Holding Current IT=50mA, RGK=1 KΩ - - 5 mA IL Latching Current IT=1mA, RGK=1 KΩ 6 - - mA Rd Dynamic resistance Tj=125°C - - 100 mΩ e: Not ote: 1. Pulse Width = 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement V WCD4C60S eratu Fig. 1 IT(AV)(DC) vs lead Temp mpe turre eratu Fig. 3 IGT,IH,IL Temp mpe turre Characteris isttics Fig.5 dv/dt VS RGK Fig. 2 Fig. 4 PD( AV) VS IT(AV) D(A er oo es ITSM VS Numb umber ooff cycl cycle dt VS CGK Fig.6 dv/ v/d WCD4C60S state Characteris Fig.7 OnOn-s isttics Fig.8 RθJA VS Pulse du durration WCD4C60S age Dim ension TO252 Pack cka Dime Unit: mm