PRELIMINARY 1N4148SM SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 200 mAMP 75 VOLTS 5 nsec HYPER FAST RECTIFIER Designer's Data Sheet FEATURES: • • • • • • Hyper Fast Recovery: 5 nsec maximum Subminiature Surface Mount Package Round Tab Mounting (Square Tabs Available) Hermetically Sealed Planar Passivated Chip For High Efficiency Applications SURFACE MOUNT ROUND TAB "SM" • TX, TXV, and Space Level Screening Available Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TA = 25 oC Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25oC) Operating and Storage Temperature Maximum Thermal Resistance Junction to End Tab NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. SYMBOL VALUE UNITS VRRM VRWM VR 75 Volts Io 200 mAmps IFSM 2 Amps TOP & TSTG -65 TO +200 R2JE 0.35 DATA SHEET #: RC0061A o C o C/mW PRELIMINARY 1N4148SM SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 Electrical Characteristics SYMBOL MAXIMUM UNITS Instantaneous Forward Voltage Drop (TA = 25oC, 300 - 500:s Pulse) IF = 10mA IF = 100mA VF1 VF2 0.8 1.2 VDC Instantaneous Forward Voltage Drop (300 - 500:s Pulse) IF = 10mA, TA = 150oC IF = 100mA, TA = -55oC VF3 VF4 0.8 1.3 VDC Reverse Leakage Current (TA = 25oC, 300 :s minimum Pulse) VR = 20V VR = 75V IR1 IR2 25 500 nA Reverse Leakage Current (TA = 150oC, 300 :s minimum Pulse) VR = 20V VR = 75V IR3 IR4 35 75 :A Junction Capacitance (VR = 1.5VDC, TA = 25oC, f = 1 MHz) CJ 2.8 pF Reverse Recovery Time (IF = 10 mA, IR = 10 mA, IRR = 1 mA, TA = 25oC) tRR 5 nsec CASE OUTLINE: ROUND TAB "SM" DIMENSIONS 2x C iB A DIM MIN. MAX. A .130" .146" B .056" .064" C .010" .022"