1N4150 FAST SWITCHING SURFACE MOUNT DIODES POWER 50 Volts VOLTAGE 500 mWatts FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives 3.0 MECHANICAL DATA • Case: Mini Melf, Glass • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: See Diagram Below • Approx. Weight: 0.13 grams • Mounting Position: Any • Ordering information: Suffix : “ -35 ” to order DO-35 Package • Packing information B - 2K per Bulk box T/R - 10K per 13" plastic Reel T/B - 5K per horiz. tape & Ammo box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted) PARAMETER SYMBOL 1N4150 UNITS Reverse Voltage VR 50 V Peak Reverse Voltage VR M 50 V VR M S 35 V IF (A V ) 200 mA IF S M 500 mA PT O T 500 mW Maximum Forward Voltage at IF =200mA VF 1.0 V Maximum Leakage Current at VR = 50V IR 0.1 µA Maximum Capacitance (Note 1) CJ 4 pF trr 4 ns Typcal Thermal Resistance RθJ A 350 Junction Temperature and Storage Temperature Range TJ ,TS -65 to +175 RMS Voltage O Maximum Average Forward Current at TA =25 C And f > 50Hz Surge Forward Current at t < 1s and TJ =25 Power Dissipation at Tamb= 25 O O C C Maximum Reverse Recovery Time (Note 2) O C/W O C NOTE: 1. CJ at VR=0, f=1MHZ 2. From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω STAD-FEB.06.2009 PAGE . 1 1N4150 1000 TJ =150OC 100 TJ =25OC REVERSE CURRENT,uA FORWARD CURRENT, mA 10 10 1.0 0.1 TJ =125OC 1.0 TJ =85OC 0.1 TJ =55OC 0.01 TJ =25OC 0.01 0 1.0 2.0 0.001 0 10 FORWARD VOLTAGE, VOLTS P D , POWER DISSIPATION (mW) DIODE CAPACITANCE, pF 3.0 2.0 1.0 2 4 6 REVERSE VOLTAGE, VOLTS TYPICAL CAPATICANCE STAD-FEB.06.2009 40 50 LEAKAGE CURRENT 4.0 0 30 REVERSE VOLTAGE, VOLTS FORWARD VOLTAGE 0 20 8 500 400 300 200 100 0 50 100 150 200 O AMBIENT TEMPERATURE( C) POWER DERATING PAGE . 2