F16 A60 WT WTF16 F16A60 Bi-Directional Triode Thyristor Features � Repetitive Peak off -State Voltage:600V � R.M.S On-State Current(IT(RMS)=16A) � Isolation voltage(VISO=1500V AC) � High Commutation dv/dt � Halogen free(WTF16A60-HF) General Description This device is fully isolated package suitable for AC switching application,phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.This device is approved to comply with applicable requirements by Underwriters Laboratories Inc. By using an internal ceramic pad, the TO220F series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (file ref.:E347423) Absolute Maximum Ratings (TJ=25℃ symbol unless otherwise specified) Parameter Ratings Units VDRM Peak Repetitive Forward Blocking Voltage(gate open) (Note1) 600 V IT(RMS) Forward Current RMS(All Conduction Angles, TJ=68℃) 16 A 155/170 A Circuit Fusing Considerations (tp=10ms) 120 A2s PGM Peak Gate Power —Forward,(TC=68℃,Pulse With≤1.0us) 5.0 W PG(AV) Average Gate Power —Forward,(Over any 20ms period) 0.5 W IFGM Peak Gate Current—Forward,TJ=125℃(20µs,120PPS) 2.0 A VRGM Peak Gate Voltage—Reverse,TJ=125℃(20µs,120PPS) 10 V ITSM 2 It Peak Forward Surge Current, (1/2 Cycle, Sine Wave,50/60Hz) TJ Junction Temperature -40~125 ℃ Tstg Storage Temperature -40~150 ℃ 2.0 g Mass Note1.Although not recommended off -state voltages up to 800v ,may be applied with out damage, but the TRIAC may switch, to the on-state .the rate of rise of current should not exceed 3A/us. Thermal Characteristics Symbol Parameter Value Units RӨJC Thermal Resistance Junction to case 3.0 ℃/W RӨJA Thermal resistance Junction to Ambient 120 ℃/W Rev.A Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. A60 WTF16 F16A60 Electrical Characteristics(Tc=25℃ unless otherwise specified) Symbol Characteristics Min. Typ. Max. Unit Peak Forward or Reverse Blocking Current TC=25℃ - - 10 µA (VD=VDRM/VRRM) TC=125℃ - - 2 mA Forward "On" Voltage (Note2) (ITM=25A Peak @ TA =25℃) - - 1.4 V Gate Trigger Current (Continuous dc) T2+G+ - - 30 (VD=6 Vdc,RL=10Ω) T2+G- - - 30 T2-G- - - 30 Gate Trigger Voltage (Continuous dc) T2+G+ - - 1.5 (VD=6 Vdc,RL=10 OΩ) T2+G- - - 1.5 T2-G- - - 1.5 Gate threshold voltage (TJ=125℃,VD=0.5VDRM) 0.2 - - V Critical rate of rise of commutation Voltage(VD=0.67VDRM) 10 - - V/µs 50 - - A/µs - 25 - mA IDRM VTM IGT VGT VGD dV/dt mA V Critical rate of rise On-State voltage dVcom/dt (VD=400V,Tj=125℃,dIcom/dt=0.5A/µs) Holding Current IH (VD=12Vdc, intiationg current=20mA) Note2.Forward current applied for 1 ms maximum duration ,duty cycle 2/6 Steady, keep you advance A60 WTF16 F16A60 Fig .1 On-State Voltage Fig.2 On-State current vs maximum Power Disspation Fig . 3 Gate Characteristeristics Fig.5 Surge On-State Current Ration (Non-Repetitive) Fig.4 On-State Current vs Allowable case Temperature Gig.6 Gate Trigger Current vs Junction Temperation 3/6 Steady, keep you advance A60 WTF16 F16A60 Gate Trigger Current vs Junction Fig.7 Fig.7Gate Junction.. Transient Thermal Impedance Fig.8 Fig.8Transient Fig.9 Gate Trigger Characteristics Test Circuit 4/6 Steady, keep you advance A60 WTF16 F16A60 Marking layout - : Winsemi Semiconductor Logo WW : Weekly code(01-52) YY : Last two digit of calendar year (11:2011;12:2012) □ : HF Null Halogen free Halogen ∆hPart No. □ WWYY 5/6 Steady, keep you advance A60 WTF16 F16A60 TO220F Package Dimension TO-220F Unit:mm 6/6 Steady, keep you advance