VS-10ETS..SPbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 10 A DESCRIPTION/FEATURES Base cathode 2 D2PAK 1 Anode The VS-10ETS..SPbF rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines. • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified for industrial level 3 Anode PRODUCT SUMMARY VF at 10 A <1V IFSM 200 A VRRM 800 V/1200 V OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 12.0 16.0 A Capacitive input filter TA = 55 °C, TJ = 125 °C common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VRRM IFSM VF 10 A, TJ = 25 °C TJ VALUES UNITS 10 A 800/1200 V 200 A 1.1 V - 40 to 150 °C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-10ETS08SPbF 800 900 VS-10ETS10SPbF 1000 1100 VS-10ETS12SPbF 1200 1300 IRRM AT 150 °C mA 0.5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 10 Maximum peak one cycle non-repetitive surge current IFSM 10 ms sine pulse, rated VRRM applied 170 Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t Document Number: 94338 Revision: 08-Apr-10 10 ms sine pulse, no voltage reapplied 200 10 ms sine pulse, rated VRRM applied 130 10 ms sine pulse, no voltage reapplied 145 t = 0.1 ms to 10 ms, no voltage reapplied 1450 For technical questions, contact: [email protected] UNITS A A2s A2√s www.vishay.com 1 VS-10ETS..SPbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 10 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C VR = Rated VRRM TJ = 150 °C VALUES UNITS 1.1 V 20 mΩ 0.82 V 0.05 mA 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient (PCB mount) Soldering temperature TEST CONDITIONS TJ, TStg RthJC DC operation VALUES UNITS - 40 to 150 °C 2.5 °C/W RthJA (1) 62 TS 240 °C 2 g Approximate weight 0.07 oz. 10ETS08S Marking device Case style D2PAK (SMD-220) 10ETS10S 10ETS12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94338 Revision: 08-Apr-10 VS-10ETS..SPbF High Voltage Series Input Rectifier Diode, 10 A Vishay High Power Products 150 130 Ø Conduction angle 120 110 100 30° 60° 90 90° 120° 14 12 RMS limit 10 8 6 Ø Conduction period 10ETS.. Series TJ = 150 °C 4 0 0 2 4 6 8 10 0 12 2 4 6 8 10 12 14 16 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 200 10ETS.. Series RthJC (DC) = 2.5 °C/W 140 130 Ø Conduction period 120 110 30° 60° 100 90° 180° DC 6 8 10 12 14 16 12 100 80 10ETS.. Series 1 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 240 180° 120° 90° 60° 30° 14 120 18 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 220 10 RMS limit 8 6 Ø 4 Conduction angle 2 10ETS.. Series TJ = 150 °C Peak Half Sine Wave Forward Current (A) 16 4 140 40 90 2 160 60 120° 0 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 180 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 16 2 180° 80 Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 18 Maximum Average Forward Power Loss (W) 140 Maximum Allowable Case Temperature (°C) 20 10ETS.. Series RthJC (DC) = 2.5 °C/W 200 180 160 140 120 100 80 10ETS.. Series 60 0 40 0 2 4 6 8 10 0.01 0.1 1.0 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94338 Revision: 08-Apr-10 For technical questions, contact: [email protected] www.vishay.com 3 VS-10ETS..SPbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 10 A Instantaneous Forward Current (A) 100 TJ = 25 °C TJ = 150 °C 10 10ETS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 10ETS.. Series 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94338 Revision: 08-Apr-10 VS-10ETS..SPbF High Voltage Series Input Rectifier Diode, 10 A Vishay High Power Products ORDERING INFORMATION TABLE Device code VS- 10 E T S 12 S 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating (10 = 10 A) 3 - Circuit configuration: TRL PbF 8 9 E = Single diode 4 - Package: T = TO-220AC 5 - Type of silicon: 6 - Voltage code x 100 = VRRM 7 - S = TO-220 D2PAK (SMD-220) version 8 - S = Standard recovery rectifier 08 = 800 V 10 = 1000 V 12 = 1200 V None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 Document Number: 94338 Revision: 08-Apr-10 For technical questions, contact: [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1