VS-10ETF..SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base common cathode + 2 D2PAK (SMD-220) 1 Anode - • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified for industrial level APPLICATIONS 3 - Anode • Output rectification and freewheeling in inverters, choppers and converters • Input rectifications where severe restrictions on conducted EMI should be met PRODUCT SUMMARY VRRM 200 V to 600 V VF at 10 A < 1.2 V trr 50 ns DESCRIPTION The VS-10ETF..SPbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) Sinusoidal waveform VALUES UNITS 200 to 600 V 10 IFSM A 150 trr 1 A, 100 A/μs VF 10 A, TJ = 25 °C TJ Range 50 ns 1.2 V - 40 to 150 °C VOLTAGE RATINGS VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-10ETF02SPbF 200 300 VS-10ETF04SPbF 400 500 VS-10ETF06SPbF 600 700 PART NUMBER IRRM AT 150 °C mA 2 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL IF(AV) IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t Document Number: 94091 Revision: 26-Apr-10 TEST CONDITIONS VALUES TC = 128 °C, 180° conduction half sine wave 10 10 ms sine pulse, rated VRRM applied 150 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied A 160 112.5 10 ms sine pulse, no voltage reapplied 160 t = 0.1 ms to 10 ms, no voltage reapplied 1125 For technical questions, contact: [email protected] UNITS A2s A2√s www.vishay.com 1 VS-10ETF..SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS VALUES 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 1.2 V 12.7 mΩ 1.25 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS mA 2.0 RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Reverse recovery time trr IF at 10 Apk 145 ns Reverse recovery current Irr 2.75 A Reverse recovery charge Qrr 25 A/μs 25 °C 0.32 μC Snap factor S IFM trr t dir dt 0.6 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance junction to case Maximum thermal resistance junction to ambient (PCB mount) Soldering temperature SYMBOL TEST CONDITIONS TJ, TStg RthJC DC operation VALUES UNITS - 40 to 150 °C 1.5 °C/W RthJA (1) 40 TS 240 °C 2 g Approximate weight 0.07 oz. 10ETF02S Marking device Case style D2PAK (SMD-220) 10ETF04S 10ETF06S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94091 Revision: 26-Apr-10 VS-10ETF..SPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 20 10ETF..S Series RthJC (DC) = 1.5 °C/W 145 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 Ø Conduction angle 135 130 120° 125 30° 60° 90° 6 8 90° 60° 120° 180° DC 30° RMS limit 12 8 Ø 4 Conduction period 180° 0 0 2 4 10 12 4 0 Average Forward Current (A) 8 12 16 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 160 10ETF..S Series RthJC (DC) = 1.5 °C/W 145 140 Ø Conduction period 135 130 DC 60° 125 At any rated load condition and with rated VRRM applied following surge. 140 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 10ETF..S Series TJ = 150 °C 16 120 120° Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 120 100 80 60 30° 90° 10ETF..S Series 180° 40 120 0 2 4 8 6 10 12 14 16 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 180 16 120° 14 90° 160 60° 12 180° 30° 10 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Vishay High Power Products RMS limit 8 6 Ø 4 Conduction angle 2 10ETF..S Series TJ = 150 °C 0 2 4 6 8 10 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 140 120 100 80 60 0 Maximum non-repetitive surge current versus pulse train duration. 10ETF..S Series 40 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94091 Revision: 26-Apr-10 For technical questions, contact: [email protected] www.vishay.com 3 VS-10ETF..SPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 100 1.4 10ETF..S Series TJ = 25 °C 10ETF..S Series 1.2 Qrr - Maximum Reverse Recovery Charge (µC) Instantaneous Forward Current (A) Vishay High Power Products TJ = 150 °C TJ = 25 °C 10 1.0 IFM = 10 A 0.8 0.6 IFM = 5 A 0.4 IFM = 2 A 0.2 IFM = 1 A 1 0.5 0 1.0 1.5 2.0 2.5 0 3.0 40 80 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 2.5 0.15 Qrr - Maximum Reverse Recovery Charge (µC) 10ETF..S Series TJ = 150 °C trr - Maximum Reverse Recovery Time (µs) 120 Instantaneous Forward Voltage (V) 0.20 IFM = 20 A IFM = 10 A 0.10 IFM = 5 A IFM = 2 A 0.05 10ETF..S Series TJ = 25 °C IFM = 20 A 2.0 IFM = 10 A 1.5 IFM = 5 A 1.0 IFM = 2 A 0.5 IFM = 1 A IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.4 15 10ETF..S Series TJ = 25 °C Irr - Maximum Reverse Recovery Current (A) 10ETF..S Series TJ = 150 °C trr - Maximum Reverse Recovery Time (µs) IFM = 20 A 0.3 IFM = 20 A 0.2 IFM = 10 A IFM = 5 A 0.1 IFM = 2 A IFM = 20 A 12 IFM = 10 A IFM = 5 A 9 IFM = 2 A 6 IFM = 1 A 3 IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94091 Revision: 26-Apr-10 VS-10ETF..SPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A Vishay High Power Products 20 Irr - Maximum Reverse Recovery Current (A) 10ETF..S Series TJ = 150 °C IFM = 20 A 16 IFM = 10 A 12 IFM = 5 A IFM = 2 A 8 IFM = 1 A 4 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) ZthJC - Transient Thermal Impedance (°C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 10 1 Steady state value (DC operation) 0.1 0.01 Single pulse 0.001 0.001 Document Number: 94091 Revision: 26-Apr-10 0.01 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 10ETF..S Series 1 10 Square Wave Pulse Duration (s) Fig. 14 - - Thermal Impedance ZthJC Characteristics For technical questions, contact: [email protected] www.vishay.com 5 VS-10ETF..SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A ORDERING INFORMATION TABLE Device code VS- 10 E T F 06 S 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating (10 = 10 A) 3 - Circuit configuration: TRL PbF 8 9 E = Single diode 4 - Package: T = D2PAK (TO-220AC) 5 - Type of silicon: F = Fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = Surface mountable 8 - 02 = 200 V 04 = 400 V 06 = 600 V None = Tube TRR = Tape and reel (right oriented) TRL = Tape and reel (left oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94091 Revision: 26-Apr-10 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1