Switching Diode 1SS110 *150mW DO-34 * Glass silicon switching diodes * We declare that the material of product compliance with RoHS requirements. Product Characteristic Absolute Maximum Ratings(Ta=25°C) Type VR(V) IF(mA) Pd(mW) Topr(℃) Tstg(℃) 1SS110 35 100 150 -20~+60 -55~+125 Forward Voltage at IF=100mA symbol VF MIN - TYPE - MAX 1.0 Unit V Leakage Current at VR=25V IR - - 0.1 uA Characteristics at Ta = 25°C Parameter Symbol Breakdown Voltage at IR=10uA V(BR)R 35 - - V Capacitance at VR = 6V f =1MHZ CT - - 1.2 pF Forward resistance at IF=2mA f=100MHz rj - - 0.9 Ω Inductance at f=250MHZ Ls - 3 - nH LESHAN RADIO COMPANY, LTD. Packing Taping / Box(T52) Tape Inner Box: 2500pcs/each 80mm 80mm 260mm Bulk Tape Inner Box: 5000pcs/each 85mm 160 mm 185mm