2N2905A Switching Transistor PNP Silicon Epitaxial Features • MIL−PRF−19500/290 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military http://onsemi.com COLLECTOR 3 Temperature Range Screening 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PT 800 5.13 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PT 3.0 20 W mW/°C TJ, Tstg −65 to +200 °C Operating and Storage Junction Temperature Range 1 EMITTER TO−39 CASE 205AB STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 195 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device Package Shipping TO−39 Bulk JAN2N2905A JANTX2N2905A JANTXV2N2905A © Semiconductor Components Industries, LLC, 2011 July, 2011 − Rev. 0 1 Publication Order Number: 2N2905A/D 2N2905A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)CEO −60 − Vdc Collector−Base Cutoff Current (VCE = −60 Vdc) ICES − −1.0 mAdc Collector to Base Cutoff Current (VCB = −50 Vdc) (VCB = −50 Vdc, TA = 150°C) (VCB = −60 Vdc) ICBO − − − −0.01 −10 −10 Emitter to Base Cutoff Current (VEB = 5.0 Vdc) (VEB = 3.5 Vdc) IEBO − − −10 −0.050 75 100 100 100 50 50 − 450 − 300 − − − − −0.4 −1.6 − − −1.3 −2.6 2.0 − 100 − Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (Note 1) (IC = −500 mAdc, VCE = −10 Vdc) (Note 1) (IC = −1.0 mAdc, VCE = −10 Vdc, TA = −55°C) Collector −Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Small Signal Short−Circuit Forward Current Transfer Ratio (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) |hfe| Small Signal Short−Circuit Forward Current Transfer Ratio (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1 kHz) hfe − − Output Capacitance (VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = −2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cibo − 30 pF SWITCHING CHARACTERISTICS Turn−On Time See MIL−PRF−19500/290 ton − 45 ns Turn−Off Time See MIL−PRF−19500/290 toff − 300 ns 1. Pulse Test: See section 4 of MIL−STD−750. http://onsemi.com 2 2N2905A PACKAGE DIMENSIONS TO−39 3−Lead CASE 205AB−01 ISSUE O B A B DETAIL X U P C L R F U A SEATING PLANE K NOTE 5 E T NOTE 7 D NOTES 4 & 6 3X 0.007 (0.18MM) A B S C DETAIL X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. 8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 8.89 9.40 8.00 8.51 6.10 6.60 0.41 0.48 0.23 3.18 0.41 0.48 0.71 0.86 0.73 1.02 12.70 14.73 6.35 --45_BSC 5.08 BSC --1.27 1.37 BSC --0.76 2.54 --- INCHES MIN MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.016 0.019 0.009 0.125 0.016 0.019 0.028 0.034 0.029 0.040 0.500 0.580 0.250 --45 _BSC 0.200 BSC --0.050 0.054 BSC --0.030 0.100 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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