2SC3356 TRANSISTOR (NPN) FEATURES SOT-23-3L Power dissipation 0.2 W (Tamb=25℃) 1. 02 Collector current 0.1 A ICM: Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range 0. 95¡ À0. 025 2. 80¡ À0. 05 0. 35 1. 9 1. 60¡ À0. 05 2. 92¡ À0. 05 PCM: 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10µA, IE=0 20 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA, IB=0 12 V Emitter-base breakdown voltage V(BR)EBO IE= 10µA, IC=0 3 V Collector cut-off current ICBO VCB= 10 V, IE=0 1 µA Emitter cut-off current IEBO VEB= 1V , IC=0 1 µA DC current gain hFE VCE= 10V, IC= 20mA 50 Transition frequency fT VCE=10V, IC= 20mA 6 Noise figure NF VCE=10V, IC= 7mA, f = 1GHz 300 GHz 2 CLASSIFICATION OF hFE Marking Rank Range R23 R24 R25 Q R S 50-100 80-160 125-250 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ dB