Product Specification www.jmnic.com 2SC2246 Silicon Power Transistors DESCRIPTION ・High voltage ,high speed ・With TO-3 package APPLICATIONS ・Power switching ・Power amplification ・power driver PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-Peak 30 A IB Base current 6 A PT Total power dissipation 100 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.0 ℃/W Tmb=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base JMnic Product Specification www.jmnic.com 2SC2246 Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 400 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; L=25mH V VCEsat Collector-emitter saturation voltage IC=6A IB=1.2A 1.2 V VBesat Base-emitter saturation voltage IC=6A IB=1.2A 1.5 V ICBO Collector cut-off current VCB=450V IE=0 TC=125℃ 1 4 mA ICEO Collector cut-off current VCE=400V IB=0 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=6A ; VCE=5V 1.0 μs 2.0 μs 1.0 μs 10 Switching times ton Turn-on time ts Storage time tf Fall time IC=6A IB1=- IB2=1.2A JMnic Product Specification www.jmnic.com 2SC2246 Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic