Inchange Semiconductor Product Specification 2SB1094 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1585 APPLICATIONS ・Ideal for power supplies or variety or in audio and other equipment PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector -emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -3 A ICM Collector current-peak -5 A IB Base current -0.6 A PC Collector power dissipation Ta=25℃ 2.0 TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1094 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO Collector-emitter voltage IC=-30mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A -2.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -10 μA hFE-1 DC current gain IC=-50mA ; VCE=-5V 20 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 40 Transition frequency IC=-0.1A; VCE=-5V 20 MHz Collector output capacitance f=1MHz ; VCB=-10V 70 pF fT COB hFE-2 Classifications M L K 40-80 60-120 100-200 2 -60 UNIT V 200 Inchange Semiconductor Product Specification 2SB1094 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3