JMnic Product Specification 2SC3423 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1360 ・High transition frequency APPLICATIONS ・Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 50 mA IB Base current 5 mA PD Total power dissipation Ta=25℃ 1.2 TC=25℃ 5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ JMnic Product Specification 2SC3423 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=10mA; IB=1mA 1.0 V VBE Base-emitter on voltage IC=10mA ; VCE=5V 0.8 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 μA hFE DC current gain IC=10mA ; VCE=5V Cob Output capacitance IE=0 ; VCB=10V f=1MHz 1.8 pF fT Transition frequency IC=10mA ; VCE=5V 200 MHz hFE Classifications O Y 80-160 120-240 2 150 UNIT V 80 240 JMnic Product Specification 2SC3423 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SC3423 Silicon NPN Power Transistors 4