2SC4215 TRANSISTOR (NPN) SOT-323 FEATURES Small reverse transfer capacitance: Cre= 0.55pF(typ.) z Low noise figure: NF=2dB (typ.) (f=100 MHz) z 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 20 mA PC Collector Power Dissipation 100 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 4 V Collector cut-off current ICBO VCB=40V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE VCE=6V,IC=1mA Cc.rbb′ Collector-base time constant conditions Reverse transfer capacitance Cre VCB=10V,f=1MHz Noise figure NF Gpe 25 260 17 0.55 pF 5 23 O Y Range 40-80 70-140 100-200 Marking QR QO QY JinYu semiconductor www.htsemi.com dB dB R １ ps MHz CLASSIFICATION OF hFE Rank UNIT 550 2 VCC=6V,Ic=1mA,f=100MHZ MAX 200 VCE=6V,IC=1mA, f=30MHZ VCE=6V,IC=1mA, Power gain TYP 40 fT Transition frequency MIN 2SC4215 ２ JinYu semiconductor www.htsemi.com 2SC4215 ３ JinYu semiconductor www.htsemi.com