SAVANTIC 2SD1026

SavantIC Semiconductor
Product Specification
2SD1026
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High DC current gain
·DARLINGTON
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current-Continuous
15
A
ICM
Collector current-Peak
22
A
IB
Base current
1
A
IBM
Base current-Peak
2
A
PT
Total power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
/W
SavantIC Semiconductor
Product Specification
2SD1026
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
CONDITIONS
MAX
UNIT
IC=10A; IB=20mA
1.5
V
Base-emitter saturation voltage
IC=10A; IB=20mA
2.0
V
ICEO
Collector cut-off current
VCE=100V; IB=0
0.1
mA
ICBO
Collector cut-off current
VCB=100V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
5
mA
hFE
DC current gain
IC=10A ; VCE=3V
fT
Transition frequency
IC=1.5A ; VCE=10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=15A; IB1=IB2=20mA
RL=2>;VBB2=4V
2
MIN
TYP.
1500
30000
20
MHz
2
µs
5
µs
3
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD1026