ISC 2SC4664

Inchange Semiconductor
Product Specification
2SC4664
Silicon NPN Power Transistors
DESCRIPTION
・With ITO-220 package
・Switching power transistor
・Low collector saturation voltage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
8
A
ICM
Collector current-Peak
16
A
IB
Base current
3
A
IBM
Base current-Peak
6
A
PT
Total power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
4.17
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
Inchange Semiconductor
Product Specification
2SC4664
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
At rated volatge
0.1
mA
0.1
mA
ICBO
CONDITIONS
MIN
TYP.
MAX
200
UNIT
V
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
At rated volatge
hFE-1
DC current gain
IC=4A ; VCE=2V
10
hFE-2
DC current gain
IC=1mA ; VCE=2V
10
fT
Transition frequency
IC=0.8A ; VCE=10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A;IB1=0.8A
IB2=1.6A ,RL=37.5Ω
VBB2=4V
2
25
13
MHz
0.3
μs
1.0
μs
0.1
μs
Inchange Semiconductor
Product Specification
2SC4664
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3