Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 4 V IC Collector current (DC) 3 A ICM Collector current-peak 8 A IB Base current (DC) 0.5 A PC Collector power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 5.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 50 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 50 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 4 V Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=4V 1.5 V ICBO Collector cut-off current VCB=25V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=4V 35 hFE-2 DC current gain IC=1A ; VCE=4V 35 Transition frequency IC=0.5A ; VCE=4V 5.0 VCEsat fT CONDITIONS hFE-2 classifications A B C D 35-70 60-120 100-200 160-320 2 MIN TYP. MAX UNIT 320 MHz Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors 4