isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4622 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·High Switching Speed ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4622 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.2 V ICBO Collector Cutoff Current VCB= 450V ; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 10V; IC=0 0.1 mA hFE DC Current Gain IC= 4A; VCE= 5V 1.0 μs 2.5 μs 0.5 μs B B 10 Switching times ton Turn-on Time tstg Storage Time tf IC= 5A; IB1= 1A; IB2= -2A; RL= 30Ω; PW=20μs; Duty Cycle≤2% Fall Time isc Website：www.iscsemi.cn 2