2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 High Voltage：VCEO = 100V Gain of 20 @ IC = 0.5A G H Emitter Base Collector J A D B Collector REF. A B C D E F G H J K K E Base C F Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Symbol 2N6716 2N6717 2N6718 2N6716 2N6717 2N6718 Rating 60 80 100 60 80 100 5 1 1 150, -55~150 VCBO VCEO Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Unit VEBO IC PD TJ, TSTG V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter 2N6716 2N6717 2N6718 2N6716 Collector to Emitter 2N6717 Breakdown Voltage 2N6718 Emitter to Base Breakdown Voltage 2N6716 Collector Cut-Off Current 2N6717 2N6718 2N6716 Emitter Cut-Off Current 2N6717 2N6718 Collector to Base Breakdown Voltage DC Current Gain http://www.SeCoSGmbH.com/ 18-Jan-2011 Rev. A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1)* hFE (2)* hFE (3)* Min. Typ. Max. 60 80 100 60 80 100 5 80 50 20 - - Unit V IC=100μA, IE=0 V IC=1mA, IB=0 V IE=1mA, IC=0 VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 1 μA 1 μA 250 - Test Conditions VEB=5V, IC=0 VCE=1V, IC=50mA VCE=1V, IC=250mA VCE=1V, IC=500mA Any changes of specification will not be informed individually. Page 1 of 3 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente Collector to Emitter Saturation Voltage VCE(sat) * Base to Emitter Turn-on Voltage Collector to Base Capacitance Transition Frequency VBE(on) * CCB fT 50 - 0.5 0.35 1.2 30 500 V V pF MHz IC=250mA, IB=10mA IC=250mA, IB=25mA VCE=1V, IC= 250mA VCE=10V, f=1MHz VCE=10V, IC=50mA *Pulse test. http://www.SeCoSGmbH.com/ 18-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 3 2N6716 / 2N6717 / 2N6718 Elektronische Bauelemente 1A , 100V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 18-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 3