2SC4445 Application : Switching Regulator and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 3(Pulse6) A hFE IC=10mA 800min VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 60(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 15typ MHz °C COB VCB=10V, f=1MHz 50typ pF 3.0 3.3 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 357 0.7 10 –5 0.1 –0.35 0.7max 4max 0.7max 2 3 V C E (sat) 0.05 0.1 0.5 1 7 5 –55˚C 10 5 0.5 1 3 1 tf 0.5 t on 0.1 0.1 0.5 5 0.3 1 10 50 Collector Curr ent I C (A) p) nk 5 si 1000 at 500 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 40 he 100 Collector-Emitter Voltage V C E (V) P c – T a Derating ite 0.05 1000 fin 0.05 100 60 0.5 0.1 mp) 10 Time t(ms) 1 0.1 106 2 0.5 In Without Heatsink Natural Cooling 1.2 ith s 0.5 1.0 W 0µ µs 10 1 0.8 1 Ma xim um Powe r Dissipat io n P C (W) 5 50 1 50 Collector Curr ent I C (A) 10 0.6 4 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 10 0.4 Collector Current I C (A) Collector Current I C (A) 5 t s tg V C C 250V I C :I B1 :–I B 2 =10:1.5:5 Transient Thermal Resistance t o n• t s t g• t f (µ s) 25˚C 0.2 θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) Sw it ching Time DC C urrent G ain h FE 125˚C 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 mp) 0 3 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 2 0.01 1 e Tem p) –55˚C (Case Tem p) 25˚C (Case Tem Temp) 125˚C (Case (Cas V B E (sat) 1 2 e Te 25˚C (Case Temp) 125˚C (Case Temp) Cas –55˚C (Case Temp) Collector-Emitter Voltage V C E (V) 50 (V C E =4V) 2 0 0.01 4 E 3 θ j - a ( ˚ C/W) 1 0 C Weight : Approx 6.5g a. Part No. b. Lot No. –55˚C 50mA 3.35 1.5 ˚C ( 100mA 1 4.4 125 200m A 0.65 +0.2 -0.1 5.45±0.1 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) Collector Current I C (A) 300m A 2 0 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 500 mA 0.8 2.15 1.05 +0.2 -0.1 RL (Ω) I B =700mA 1.75 5.45±0.1 VCC (V) 3 ø3.3±0.2 a b V ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 3.45 ±0.2 e Te –55 to +150 5.5±0.2 (Cas Tstg 15.6±0.2 25˚C IC 0.8±0.2 Ratings ICBO 5.5 Conditions V 23.0±0.3 Unit 900 VEBO External Dimensions FM100(TO3PF) (Ta=25°C) VCBO Symbol Symbol 1.6 ■Electrical Characteristics Ratings 16.2 ■Absolute maximum ratings (Ta=25°C) 9.5±0.2 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 20 Without Heatsink 100 Collector-Emitter Voltage V C E (V) 500 1000 3.5 0 0 50 100 Ambient Temperature Ta(˚C) 150