VISHAY 20ETS08SPBF

VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series
Vishay Semiconductors
Input Rectifier Diode, 20 A
FEATURES
Base cathode
2
1
Anode
D2PAK
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• Designed and qualified for industrial level
3
Anode
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
PRODUCT SUMMARY
VF at 10 A
<1V
IFSM
300 A
VRRM
800 V/1200 V
DESCRIPTION
The VS-20ETS...SPbF rectifier High Voltage Series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
16.3
21
A
Capacitive input filter TA = 55 °C, TJ = 125 °C
common heatsink of 1 °C/W
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
IF(AV)
Sinusoidal waveform
20
A
VRRM
800/1200
V
IFSM
300
A
20 A, TJ = 25 °C
VF
TJ
1.1
V
- 40 to 150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
VS-20ETS08SPbF
800
900
VS-20ETS12SPbF
1200
1300
PART NUMBER
IRRM AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
TC = 105 °C, 180° conduction half sine wave
20
Maximum peak one cycle
non-repetitive surge current
IFSM
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
Document Number: 94340
Revision: 28-Jul-10
10 ms sine pulse, rated VRRM applied
316
10 ms sine pulse, no voltage reapplied
442
t = 0.1 ms to 10 ms, no voltage reapplied
4420
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
UNITS
A
A2s
A2s
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VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series
Vishay Semiconductors
Input Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
20 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
VR = Rated VRRM
TJ = 150 °C
VALUES
UNITS
1.1
V
10.4
m
0.85
V
0.1
mA
1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA (1)
Typical thermal resistance,
case to heatsink
TEST CONDITIONS
RthCS
Marking device
UNITS
- 40 to 150
°C
DC operation
1.3
For D2PAK version
62
Mounting surface, smooth and greased
0.5
°C/W
2
g
0.07
oz.
minimum
6.0 (5.0)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
VALUES
Case style D2PAK (SMD-220)
20ETS08S
20ETS12S
Note
(1) When mounted on 1” square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]hay.com
Document Number: 94340
Revision: 28-Jul-10
VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series
Input Rectifier Diode, 20 A
35
20ETS.. Series
RthJC (DC) = 1.3 °C/W
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
140
Ø
130
Conduction angle
120
110
100
60°
30°
90° 120°
30
25
20
RMS limit
15
Ø
10
Conduction period
20ETS.. Series
TJ = 150 °C
5
0
0
2
4
6
8
10 12 14 16 18 20 22
0
5
10
15
20
25
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
300
20ETS.. Series
RthJC (DC) = 1.3 °C/W
140
130
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
DC
180°
120°
90°
60°
30°
180°
10
Ø
Conduction period
120
30°
110
60°
90°
100
120°
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
250
200
150
100
20ETS.. Series
180°
DC
90
50
0
5
10
15
20
30
25
1
35
Average Forward Current (A)
300
180°
120°
90°
60°
30°
25
20
Peak Half Sine Wave
Forward Current (A)
30
10
RMS limit
15
Ø
10
Conduction angle
20ETS.. Series
TJ = 150 °C
5
100
Number of Equal Amplitude Half
Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 2 - Current Rating Characteristics
Maximum Average Forward
Power Loss (W)
Vishay Semiconductors
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
250
200
150
100
20ETS.. Series
0
50
0
4
8
12
16
20
24
0.01
0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94340
Revision: 28-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series
Input Rectifier Diode, 20 A
Instantaneous Forward Current (A)
Vishay Semiconductors
1000
TJ = 25°C
100
TJ = 150°C
10
20ETS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forwad Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
ZthJC - Transient Thermal
Impedance (°C/W)
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single pulse
0.01
0.0001
0.001
0.01
20ETS.. Series
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94340
Revision: 28-Jul-10
VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series
Input Rectifier Diode, 20 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
20
E
T
S
12
S
1
2
3
4
5
6
7
1
-
HPP product suffix
2
-
Current rating (20 = 20 A)
3
-
Circuit configuration
TRL PbF
8
9
E = Single diode
4
-
Package:
T = TO-220AC
5
-
Type of silicon:
6
-
Voltage code x 100 = VRRM
7
-
S = TO-220 D2PAK (SMD-220) version
8
-
S = Standard recovery rectifier
08 = 800 V
12 = 1200 V
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
www.vishay.com/doc?95054
Packaging information
www.vishay.com/doc?95032
SPICE model
www.vishay.com/doc?95409
Document Number: 94340
Revision: 28-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
H
2x e
Base
Metal
(4)
b1, b3
Gauge
plane
Seating
plane
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
4
e
0.100 BSC
H
14.61
15.88
0.575
0.625
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
L2
1.27
1.78
0.050
0.070
L3
2
2.54 BSC
L4
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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