2SC4116 TRANSISTOR (NPN) SOT-323 FEATURES z High voltage and high current Excellent hFE linearity z High hFE z z Low noise z Complementary to 2SA1586 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3. COLLECTOR Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 100 mW TJ Junction Temperature 150 ℃ Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=2mA Collector-emitter saturation voltage VCE(sat) fT Transition frequency Collector output capacitance Cob Noise figure NF 70 IC=100mA,IB=10mA VCE=10V,IC=1mA, 700 0.25 V 80 VCB=10V,IE=0,f=1MHz VCE=6V,Ic=0.1mA, f=1KHZ,Rg=10KΩ MHz 3.5 pF 10 dB CLASSIFICATION OF hFE O Y GR BL Range 70-140 120-240 200-400 350-700 Marking LO LY LG LL Rank １ JinYu semiconductor www.htsemi.com 2SC4116 ２ JinYu semiconductor www.htsemi.com 2SC4116 ３ JinYu semiconductor www.htsemi.com