ISC 2SD2401

Inchange Semiconductor
Product Specification
2SD2401
Silicon NPN Power Transistors
・
DESCRIPTION
・With MT-200 package
・Complement to type 2SB1570
・DARLINGTON
APPLICATIONS
・Audio, series regulator and
general purpose applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
160
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
12
A
IB
Base current
1
A
PC
Collector power dissipation
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD2401
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=7 A;IB=7m A
2.5
V
VBEsat
Base-emitter saturation voltage
IC=7 A;IB=7m A
3.0
V
ICBO
Collector cut-off current
VCB=160V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=7A ; VCE=4V
fT
Transition frequency
IC=2A ; VCE=12V
55
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
95
pF
0.5
μs
10.0
μs
1.1
μs
150
UNIT
V
5000
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7A;RL=10Ω
IB1=- IB2=7mA
VCC=70V
hFE classifications
O
P
Y
5000-12000
6500-20000
15000-30000
2
Inchange Semiconductor
Product Specification
2SD2401
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3