ISC 2SB536

Inchange Semiconductor
Product Specification
2SB536
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD381
・Low collector saturation voltage
APPLICATIONS
・Audio frequency power amplifier
・Low speed power switching
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-130
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-1.5
A
ICM
Collector current-peak
-3.0
A
IB
Base current
-0.3
A
PT
Total power dissipation
Ta=25℃
1.5
W
TC=25℃
20
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
Inchange Semiconductor
Product Specification
2SB536
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-1A; IB=-0.1A
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-1.0
μA
hFE-1
DC current gain
IC=-5mA ; VCE=-5V
25
hFE-2
DC current gain
IC=-0.3A ; VCE=-5V
40
COB
Output capacitance
IE=0 ; VCB=-10V; f=1MHz
35
pF
fT
Transition frequency
IC=-0.1A ; VCE=-5V
40
MHz
‹
CONDITIONS
hFE-2 Classifications
N
M
L
K
40-80
60-120
80-160
120-250
2
MIN
TYP.
MAX
-120
UNIT
V
250
Inchange Semiconductor
Product Specification
2SB536
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3