isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5407 DESCRIPTION ·High Breakdown Voltage: VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 15 A ICM Collector Current- Peak 20 A Base Current- Continuous 8 A IB B Collector Power Dissipation @ TC=25℃ 100 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 3 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5407 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= 7.5A; IB= 1.88A 3.0 V Base-Emitter Saturation Voltage IC= 7.5A; IB= 1.88A 1.5 V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1700V; IE= 0 50 1.0 μA mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 μA hFE DC Current Gain IC= 7.5A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V fT CONDITIONS MIN TYP. 6 14 3 MHz Switching Times tstg Storage Time 4.0 μs 0.3 μs IC= 8A, IB1= 2A; IB2= -4A tf Fall Time isc Website：www.iscsemi.cn 2