isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2581 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICP Collector Current-Pulse 30 A Collector Power Dissipation @ Ta=25℃ 3.0 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 70 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2581 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 20 35 hFE-2 DC Current Gain IC= 8A ; VCE= 5V 5 8 Fall Time IC= 6A , IB1= 1.2A ; IB2= -2.4A PW=20μs; Duty Cycle≤1% tf isc Website：www.iscsemi.cn CONDITIONS MIN MAX 800 B B 2 TYP. UNIT V 0.3 μs INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SD2581