2SD1757K TRANSISTOR (NPN) SOT-23 FEATURES Optimal for muting. z 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 15 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 6.5 V Collector cut-off current ICBO VCB=20V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE VCE=3V,IC=100mA Collector-emitter saturation voltage VCE(sat) fT Transition frequency Cob Collector Output Capacitance CLASSIFICATION OF Rank Range MARKING JinYu MIN TYP MAX 120 UNIT 560 IC= 500mA, IB=50mA 0.4 V VCE=5V, IC= 50mA ,f=100MHz 150 MHz VCB=10V,IE=0,f=1MHZ 15 pF hFE Q R S 120-270 180-390 270-560 AAQ AAR AAS １ semiconductor conditions www.htsemi.com 2SD1757K ２ JinYu semiconductor www.htsemi.com