C Equivalent circuit 2SD2401 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570) ■Electrical Characteristics Unit VCBO 160 V ICBO VCB=160V 100max µA VCEO 150 V IEBO VEB=5V 100max µA V Ratings Unit VEBO 5 V V(BR)CEO IC=30mA 150min IC 12 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max V IC=7A, IB=7mA 3.0max V 24.4±0.2 150(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=12V, IE=–2A 55typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 95typ pF 9 a b 2 3 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 70 10 7 10 –5 7 –7 0.5typ 10.0typ 1.1typ 0 0 2 4 0 6 0.2 0.5 1 5 10 50 (V C E =4V) Typ 10000 5000 125˚C 10000 25˚C 5000 –30˚C Transient Thermal Resistance DC Cur rent Gain h F E 70000 50000 1000 5 600 0.2 10 12 0.5 Collector Current I C (A) ) mp) emp e Te Cas 2 2.6 1 5 10 12 2 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) se T 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 40000 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 80 10 160 s ite he 80 at si nk Without Heatsink Natural Cooling 20 fin 0.5 In 1 120 ith Maximu m Power Dissipa tion P C (W) 0m W 40 DC s Typ 60 10 5 m Collector Curr ent I C (A) 10 100 Cu t-of f Fr eque ncy f T (MH Z ) DC Cur rent Gain h F E 0 Base-Emittor Voltage V B E (V) (V C E =4V) 1 0 100 200 Base Current I B (mA) h FE – I C Characteristics (Typical) 0.5 p) 2 Collector-Emitter Voltage V C E (V) 1000 02 4 ˚C ( 2 I C =5A 1 6 –30 I B =0.4mA I C =7A Tem 0.6mA 4 I C =10A (Ca 0.8mA 8 se 6 2 25˚C 1.0 mA (Ca 1.2m A 8 10 ˚C 1.5 mA θ j- a ( ˚C/W) Collector Current I C (A) A (V C E =4V) 12 125 2 .0 m 10 E I C – V BE Temperature Characteristics (Typical) 3 Collector Current I C (A) mA C Weight : Approx 18.4g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 10m 2.5 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 12 2.1 2-ø3.2±0.1 PC Tstg 6.0±0.2 36.4±0.3 7 Conditions 21.4±0.3 Symbol E External Dimensions MT-200 (Ta=25°C) Ratings Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington B 40 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 150 200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 151