2SF292200CYY 2SF292200CYY ULTRAFAST RECOVERY DIODE CHIPS DESCRIPTION Ø 2SF292200CYY is a ultrafast recovery diode chips fabricated in silicon epitaxial planar technology; Ø Ultrafast recovery times; Ø High current capability; Ø High surge current capability; Ø Low forward voltage drop; Ø Low reverse current leakage; Ø Top metal is Ag, Back metal is Ag; Ø Chip Size: 2920µm X 2920µm; Ø Chip Thickness: 280±20µm; Chip Topography and Dimensions La: Chip Size:2920 µm; Lb: Pad Size: 2840 µm; ORDERING SPECIFICATIONS Product Name 2SF292200CYY Specification For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Symbol Ratings Unit VRRM 200 V Average Forward RectifiedCurrent@Tc=150°C IFAV 15 A Peak Forward Surge [email protected] IFSM 200 A TJ 175 °C TSTG -55~175 °C Maximum Repetitive Peak Reverse Voltage Maximum Operation Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Tamb=25 Parameters Symbol ) Test Conditions IR=50 A Min. Max. Unit 200 -- V Reverse Voltage VBR Forward Voltage VF IF=15A -- 1.05 V Reverse Current IR VR=200V -- 10 A Reverse recovery time Trr IF=1A,di/dt=50A/ s -- 35 ns HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.06.06 Page 1 of 1