Inchange Semiconductor Product Specification 2SD817 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage ,high reliability ・Wide area of safe operation APPLICATIONS ・High voltage power switching TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 6 V 1.5 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD817 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=1.2A; IB=0.3A 5.0 V VBEsat Base-emitter saturation voltage IC=1.2A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE DC current gain IC=0.3A ; VCE=5V 2 10 30 Inchange Semiconductor Product Specification 2SD817 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3