Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max PC 100(Tc=25°C) W VBE(sat) IC=7A, IB=7mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 55typ MHz –55 to +150 °C COB a 4.8±0.2 2.0±0.1 ø3.2±0.1 b V pF 95typ VCB=10V, f=1MHz 19.9±0.3 VEBO Tstg 15.6±0.4 9.6 1.8 ICBO 160 2.0 Unit VCBO E External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 5.0±0.2 Symbol Conditions Ratings 2 4.0max Symbol 4.0 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) (7 0Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 70 10 7 10 –5 7 –7 0.5typ 10.0typ 1.1typ 0 0 2 4 2 0 6 0.2 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 0 100 200 (V C E =4V) 70000 50000 10000 5000 10000 25˚C 5000 –30˚C Transient Thermal Resistance D C Cur r ent Gai n h F E D C Cur r ent Gai n h F E 125˚C Typ 1000 5 500 0.2 10 0.5 Collector Current I C (A) mp) mp) e Te e Te 2.5 1 5 10 3 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 40000 1 1 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 Base Current I B (mA) h FE – I C Characteristics (Typical) 1000 02 4 (Cas I C =5A p) I C =7A 1 6 –30˚C I B =0.4mA 2 I C =10A (Cas 0.6mA 4 2 Tem 0.8mA 25˚C 6 8 se 1m A (Ca 1.2 mA ˚C Collector Current I C (A) 8 (V C E =4V) 10 3 125 1. 5m A Collector Current I C (A) A 1.4 E I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) 2m Collector-Emitter Saturation Voltage V C E (sa t) (V ) 10 m A 2. 5m A 10 C Weight : Approx 2.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 5.45±0.1 B Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 10 100 10 100 30 50 at si nk Collect or Cur ren t I C (A) he Without Heatsink Natural Cooling 20 ite 0.5 fin 1 In 40 s ith 60 0m W Cut- off F req uency f T (M H Z ) s Ma xim um Powe r Dissipat io n P C (W) m Typ 10 DC 5 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) 150 –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150