VSKDS403/100 Vishay High Power Products ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL pending • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level ADD-A-PAK BENEFITS • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate PRODUCT SUMMARY IF(AV) 200 A • High surge capability • Easy mounting on heatsink MECHANICAL DESCRIPTION ELECTRICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. The VSKDS403.. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 µs sine VF 100 Apk, TJ = 125 °C TJ Range VALUES UNITS 200 A 100 V 25 500 A 0.66 V - 55 to 175 °C VSKDS403/100 UNITS 100 V VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage Document Number: 94642 Revision: 05-Aug-09 SYMBOL VR VRWM For technical questions, contact: [email protected] www.vishay.com 1 VSKDS403/100 ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A Vishay High Power Products ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) 50 % duty cycle at TC = 111 °C, rectangular waveform 200 Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 5.5 A, L = 1 mH 15 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical 1 A SYMBOL TEST CONDITIONS VALUES UNITS 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 25 500 UNITS A 3300 ELECTRICAL SPECIFICATIONS PARAMETER 200 A Maximum forward voltage drop VFM 400 A 200 A 400 A Maximum reverse leakage current IRM Maximum junction capacitance CT Typical series inductance LS TJ = 25 °C TJ = 125 °C 0.99 TJ = 25 °C 1.3 0.83 TJ = 125 °C 1.09 6 VR = Rated VR 80 VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Rated VR Maximum RMS insulation voltage VINS 50 Hz V 55 000 mA pF 5.0 nH 10 000 V/µs 3000 (1 min) 3600 (1 s) V VALUES UNITS - 55 to 175 °C THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case per leg RthJC Typical thermal resistance, case to heatsink per module RthCS TEST CONDITIONS DC operation 0.26 °C/W 0.1 Approximate weight to heatsink Mounting torque ± 10 % busbar Case style www.vishay.com 2 A mounting compound is recommended and the torque should be rechecked after a period of 3 h to allow for the spread of the compound. JEDEC For technical questions, contact: [email protected] 75 g 2.7 oz. 4 Nm 3 TO-240AA compatible Document Number: 94642 Revision: 05-Aug-09 VSKDS403/100 ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A Vishay High Power Products 1000 1000 T =175°C J 150°C Reverse Current - IR (mA) 100 125°C 10 100°C 1 75°C 50°C .1 25°C .01 .001 0 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Tj = 175°C 10000 10 Tj = 25°C Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) 100 Tj = 125°C Tj = 25°C 1 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 60 70 80 90 100 Forward Voltage Drop - VFM (V) Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 1 D = 0.75 0.1 D = 0.5 D = 0.33 D = 0.25 D = 0.2 0.01 0.001 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94642 Revision: 05-Aug-09 For technical questions, contact: [email protected] www.vishay.com 3 VSKDS403/100 ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A Vishay High Power Products 300 Square wave (D=0.50) 80% rated Vr applied Average Power Loss - (Watts) Allowable Case Temperature (°C) 200 150 DC 100 50 see note (1) 180° 120° 90° 60° 30° 250 200 RMS Limit 150 DC 100 50 0 0 0 100 200 300 400 0 500 50 100 150 200 250 300 Average Forward Current - IF(AV)(A) Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Non-Repetitive Surge Current - IFSM(A) 100000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge 10000 1000 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94642 Revision: 05-Aug-09 VSKDS403/100 ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A Vishay High Power Products ORDERING INFORMATION TABLE Device code VS KD S 40 3 1 2 3 4 5 1 - Vishay HPP 2 - Circuit configuration: / 100 6 KD = ADD-A-PAK - 2 diodes in series 3 - S = Schottky diode 4 - Average rating (x 10) 5 - Product silicon identification 6 - Voltage rating (100 = 100 V) CIRCUIT CONFIGURATION (1) ~ (2) + (3) - LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94642 Revision: 05-Aug-09 www.vishay.com/doc?95369 For technical questions, contact: [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Diode DIMENSIONS in millimeters (inches) 29 ± 0.5 (1 ± 0.020) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 18 (0.7) REF. 24 ± 0.5 (1 ± 0.020) 6.7 ± 0.3 (0.26 ± 0.012) Viti M5 x 0.8 Screws M5 x 0.8 Document Number: 95369 Revision: 11-Nov-08 7 6 4 5 3 2 1 6.3 ± 0.2 (0.248 ± 0.008) 22.6 ± 0.2 (0.89 ± 0.008) 80 ± 0.3 (3.15 ± 0.012) 15 ± 0.5 (0.59 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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