VISHAY V40100K

New Product
V40100K
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS ®
• 150 °C high performance Schottky diode
TO-220AB
• Very low forward voltage drop
• Optimized VF vs. IR trade off for high
efficiency
2
• Increased ruggedness for reverse avalanche
capability
3
1
PIN 1
PIN 2
PIN 3
CASE
• Negligible switching losses
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
100 V
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
IFSM
250 A
Typical VF at IF = 20 A
at TJ = 125 °C
0.63 V
TJ max.
150 °C
TYPICAL APPLICATIONS
For use in high frequency converters, high efficiency
SMPS, output rectification, freewheeling, reverse
battery protection, dc-to-dc system and increased
power density systems.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Marking: V40100K
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100K
UNIT
VRRM
100
V
IF(AV)
40
20
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
A
Non-repetitive avalanche energy
at TJ = 25 °C, IAS = 1.5 A, L = 60 mH per diode
EAS
67.5
mJ
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
TJ, TSTG
- 40 to + 150
°C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Operating junction and storage temperature range
Document Number: 89121
Revision: 25-Jun-09
per device
per diode
For technical questions within your region, please contact one of the following:
[email protected], P[email protected], [email protected]
www.vishay.com
1
New Product
V40100K
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IR = 1.0 mA
Breakdown voltage
(2)
TA = 25 °C
VBR
IR = 10 mA
Instantaneous forward voltage per diode (1)
IF = 5 A
IF = 10 A
IF = 20 A
TYP.
MAX.
100
(minimum)
-
105
(minimum)
-
0.51
0.59
0.72
0.82
0.67
TA = 25 °C
VF
UNIT
V
V
IF = 5 A
IF = 10 A
IF = 20 A
TA = 125 °C
0.44
0.53
0.63
VR = 70 V
TA = 25 °C
TA = 125 °C
9
10
-
µA
mA
VR = 100 V
TA = 25 °C
TA = 125 °C
21
1000
45
µA
mA
Reverse current at rated VR per diode (2)
IR
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100K
UNIT
per diode
per device
RθJC
4
2
°C/W
Typical thermal resistance case to heatsink
RθCS
0.5
Maximum junction to case
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.85
4W
50/tube
Tube
V40100K-E3/4W
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
18
50
40
Average Power Loss (W)
Average Forward Current (A)
16
30
20
10
D = 0.5
14
D = 0.8
D = 0.3
12
D = 0.2
10
8
D = 1.0
D = 0.1
T
6
4
2
D = tp/T
tp
0
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89121
Revision: 25-Jun-09
New Product
V40100K
Vishay General Semiconductor
10 000
TA = 150 °C
10
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
1000
100
0.1
0
0.2
0.4
0.6
0.8
0.1
1
1
100
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
10
20
30
40
50
60
70
80
90
Junction to Case
1
0.1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
Document Number: 89121
Revision: 25-Jun-09
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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