ISC 2SC3170

Inchange Semiconductor
Product Specification
2SC3170
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Low collector saturation voltage
・High breakdown voltge
APPLICATIONS
・For high speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
Ta=25℃
2
W
TC=25℃
40
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3170
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A , L=25mH
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=0.6A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.6A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=3A ; VCE=5V
8
Transition frequency
IC=0.5A ; VCE=10V
fT
CONDITIONS
MIN
TYP.
MAX
400
UNIT
V
8
MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=3A ; IB1=-IB2=0.6A
VCC=100V
Fall time
2
1.0
μs
3.0
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SC3170
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3