2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), [email protected],IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA • Case: SOT-363 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : 702 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e V DS 60 V G a t e - S o ur c e Vo l t a g e V GS +20 V ID 11 5 mA ID M 800 mA PD 200 120 mW T J , T S TG -5 5 to + 1 5 0 R θJ A 625 C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) T A = 2 5 OC T A = 7 5 OC O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a ng e M a xi m um P o w e r D i s s i p a t i o n Junction-to Ambient Thermal Resistance(PCB mounted)2 O O C C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.0-AUG.4.2008 PAGE . 1 2N7002DW ELECTRICALCHARACTERISTICS P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo lta g e B V DSS V G S = 0 V , ID = 1 0 u A 60 - - V G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = 2 5 0 u A 1 - 2 .5 V R D S ( o n) VGS=4.5V, I D=75mA - - 7 .5 R D S ( o n) VGS=10V, I D=500mA - - 5 ID S S VDS=60V, VGS=0V - - 1 uA Gate Body Leakage IG S S V G S =+ 2 0 V , V D S = 0 V - - +100 nA Forward Transconductance g fS V D S = 1 5 V , ID = 2 5 0 m A 200 - - mS - 0 .6 0 .7 - 0 .1 - - 0 .0 8 - - 9 15 - 21 26 - - 50 - - 25 - - 5 S ta ti c D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o Ga te Vo lta g e D r a i n C ur r e nt Ω Dynamic To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e Qgs G a t e - D r a i n C ha r g e Qgd Tu r n - O n D e l a y Ti m e ton Tu r n - O f f D e l a y Ti m e t o ff In p u t C a p a c i t a n c e C iss O ut p ut C a p a c i t a nc e C oss R e v e r s e Tr a n s f e r C a p a c i t a nc e C rss V D S = 1 5 V , ID = 5 0 0 m A VGS=5V VDD=10V , RL=20Ω ID=500mA , VGEN=10V RG=10Ω V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ nC ns pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is - - - 250 mA V SD IS = 2 5 0 m A , V G S = 0 V - 0 .9 3 1 .2 V VDD Switching Test Circuit VIN VDD Gate Charge Test Circuit RL VGS RL VOUT RG 1mA RG REV.0.0-AUG.4.2008 PAGE . 2 2N7002DW O 1.2 5.0V V GS = 10V ~ 6.0V ID - Drain-to-Source Current (A) I D - Drain Source Current (A) Typical Characteristics Curves (TA=25 C,unless otherwise noted) 1 4.0V 0.8 0.6 0.4 3.0V 0.2 0 0 1 2 3 4 1.2 V DS=10V 1 0.8 0.6 0.4 T J=25 OC 0.2 0 5 0 1 VDS - Drain-to-Source Voltage (V) 10 R DS(ON) - On-Resistance ( W ) R DS(ON) - On-Resistance ( W ) 4 3 V GS=4.5V 2 V GS=10V 1 0 5 6 I D=500mA 8 6 T J=125 OC 4 2 T J=25 OC 0 0 0.2 0.4 0.6 0.8 1 1.2 2 3 4 5 6 7 8 9 10 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) FIG.3- On Resistance vs Drain Current RDS(ON) - On-Resistance(Normalized) 4 FIG.2- Transfer Characteristic 5 1.8 3 VGS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic 2 2 FIG.4- On Resistance vs Gate to Source Voltage V GS=10V I D=500mA 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature REV.0.0-AUG.4.2008 PAGE . 3 2N7002DW V GS - Gate-to-Source Voltage (V) 10 Vgs Qg Qsw Vgs(th) V DS=15V I D=500mA 8 6 4 2 0 0 Qg(th) Qgs Qg Qgd I D=250uA 1.1 1 0.9 0.8 0.7 -25 0 25 50 75 100 125 150 o 1 73 72 I D=250uA 71 70 69 68 67 66 65 64 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) Fig.8 - Threshold Voltage vs Temperature IS - Source Current (A) 0.8 o TJ - Junction Temperature ( C) 10 0.6 Fig.7 - Gate Charge BVDSS - Breakdown Voltage (V) Vth - G-S Threshold Voltage (NORMALIZED) 1.2 0.4 Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform 0.6 -50 0.2 Fig.9 - Breakdown Voltage vs Junction Temperature V GS=0V 1 T J=25 OC T J=125 OC 0.1 T J=-55 OC 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage REV.0.0-AUG.4.2008 PAGE . 4 2N7002DW MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2008 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.0-AUG.4.2008 PAGE . 5