DIODES ZXTP07040DFF

ZXTP07040DFF
40V, SOT23F, PNP medium power transistor
Summary;
BVCEO > -40V
BVECO > -3V
IC(cont) = -3A
VCE(sat) < -100mV @ 1A
RCE(sat) = 67m⍀
PD = 1.5W
Complementary part number ZXTN07045EFF
Description
C
This low voltage PNP transistor has been designed for applications
requiring high gain and very low saturation voltage. The SOT23F
package is pin compatible with the industry standard SOT23 footprint
but offers lower profile and higher dissipation for applications where
power density is of utmost importance.
B
Features
E
•
Low profile SOT23F package
•
Low saturation voltage
•
High Gain
•
High power dissipation
E
Applications
C
•
Load switches
•
Battery charging
•
Siren driver
•
MOSFET and IGBT gate driver
•
Motor drive
B
Pinout - top view
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
8
3000
ZXTP07040DFFTA
Device marking
1D2
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ZXTP07040DFF
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-40
V
Emitter-collector voltage (reverse blocking)
VECO
-3
V
Emitter-base voltage
VEBO
-7
V
IC
-3
A
ICM
-6
A
Base current
IB
-1
A
Power dissipation at Tamb =25°C(a)
PD
0.84
W
6.72
mW/°C
1.34
W
10.72
mW/°C
1.50
W
12.0
mW/°C
2.0
W
16.0
mW/°C
Tj, Tstg
-55 to 150
°C
Continuous collector current(c)
Peak pulse current
Linear derating factor
Power dissipation at Tamb
PD
=25°C(b)
Linear derating factor
PD
Power dissipation at Tamb =25°C(c)
Linear derating factor
PD
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Symbol
Limit
Unit
ambient(a)
R⍜JA
149
°C/W
Junction to ambient(b)
R⍜JA
93
°C/W
Junction to ambient(c)
R⍜JA
83
°C/W
Junction to ambient(d)
R⍜JA
60
°C/W
Junction to
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
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ZXTP07040DFF
Characteristics
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ZXTP07040DFF
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
BVCBO
-50
-80
V
IC = -100␮A
Collector-emitter breakdown
voltage (base open)
BVCEO
-40
-65
V
IC = -10mA (*)
Emitter-base breakdown
voltage
BVEBO
-7
-8.3
V
IE = -100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BVECO
-3
-8.6
V
IE = -100␮A
-50
nA
VCB = -36V
-20
␮A
VCB = -36V, Tamb= 100°C
Collector-base cut-off current ICBO
<-1
Max.
Unit Conditions
Emitter-base cut-off current
IEBO
<-1
-50
nA
VEB = -5.6V
Collector-emitter saturation
voltage
VCE(sat)
-110
-180
mV
IC = -0.5A, IB = -5mA(*)
-80
-100
mV
IC = -1A, IB = -100mA(*)
-230
-400
mV
IC = -1A, IB = -10mA(*)
-310
-540
mV
IC = -2A, IB = -40mA(*)
-250
-390
mV
IC = -3A, IB = -150mA(*)
Base-emitter saturation
voltage
VBE(sat)
-935
-1040
mV
IC = -3A, IB = -150mA(*)
Base-emitter turn-on voltage
VBE(on)
-825
-930
mV
IC = -3A, VCE = -2V(*)
Static forward current
transfer ratio
hFE
300
450
800
250
380
IC = -0.5A, VCE = -2V(*)
200
330
IC = -1A, VCE = -2V(*)
80
160
IC = -3A, VCE = -2V(*)
100
200
Transition frequency
fT
Output capacitance
Cobo
Delay time
td
Rise time
30
IC = -10mA, VCE = -2V(*)
MHz IC = -50mA, VCE = -5V
f = 50MHz
40
pF
VCB = -10V, f = 1MHz(*)
20.7
ns
tr
12.2
ns
Storage time
ts
375
ns
VCC = -10V,
IC = -500mA,
IB1 = IB2= -50mA
Fall time
tf
72
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
Issue 1 - September 2006
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ZXTP07040DFF
Typical characteristics
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ZXTP07040DFF
Package outline - SOT23F
c
D
b
e1
b
e
L1
L
E
E1
b
E2
A1
R
A
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.80
1.00
0.0315
0.0394
A1
0.00
0.10
0.00
b
0.35
0.45
c
0.10
D
2.80
e
e1
Millimeters
Inches
Min.
Max.
Max.
Max.
E
2.30
2.50
0.0906
0.0984
0.0043
E1
1.50
1.70
0.0590
0.0669
0.0153
0.0161
E2
1.10
1.26
0.0433
0.0496
0.20
0.0043
0.0079
L
0.48
0.68
0.0189
0.0268
3.00
0.1102
0.1181
L1
0.30
0.50
0.0153
0.0161
R
0.05
0.15
0.0019
0.0059
O
0°
12°
0°
12°
0.95 ref
1.80
Dim.
2.00
0.0374 ref
0.0709
0.0787
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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United Kingdom
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Fax: (1) 631 360 8222
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
6
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