Inchange Semiconductor Product Specification 2SD555 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High power dissipation ·Complement to type 2SB600 APPLICATIONS ·For high speed ,high current ,high power applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 5 V 10 A 200 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~200 ℃ VALUE UNIT 1.46 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SD555 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=2A 5.0 V Base-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=5V COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 300 pF Transition frequency IC=1A ; VCE=10V 15 MHz VBEsat fT CONDITIONS 2 MIN TYP. 40 MAX UNIT 200 Inchange Semiconductor Product Specification 2SD555 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3