Inchange Semiconductor Product Specification 2SC3253 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Short switching time ·Low collector saturation voltage ·Complement to type 2SA1289 APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters,converters ·Power amplifier ·Switching regulator ,driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-peak 7 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3253 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ,RBE=∞ 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 5 V Collector-emitter saturation voltage IC=2.5A; IB=0.125A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 100 μA IEBO Emitter cut-off current VEB=4V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=2V Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS hFE Classifications Q R S 70-140 100-200 140-280 2 MIN TYP. 70 MAX UNIT 280 100 MHz Inchange Semiconductor Product Specification 2SC3253 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3253 Silicon NPN Power Transistors 4