ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary RDS(on) () ID (A) 0.125 @ VGS= 10V 4 0.150 @ VGS= 6V 3.7 V(BR)DSS 100 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D • Low on-resistance • Fast switching speed • Low gate drive • SOT223 package G S Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control S D D Ordering information G Device Reel size (inches) Tape width (mm) Quantity per reel 7 12 1,000 ZXMN10A25GTA Pinout - top view Device marking ZXMN 10A25 Issue 1 - July 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN10A25G Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 100 V Gate-source voltage VGS ± 20 V ID 4 A Continuous drain current @ VGS= 10V; Tamb=25°C(b) @ VGS= 10V; Tamb=70°C(b) 3.2 @ VGS= 10V; Tamb=25°C(a) 2.9 IDM 17 A IS 5.4 A Pulsed source current (body diode)(c) ISM 17 A Power dissipation at Tamb =25°C(a) PD 2 W 16 mW/°C 3.9 W 31 mW/°C Pulsed drain current(c) Continuous source current (body diode)(b) Linear derating factor PD Power dissipation at Tamb =25°C(b) Linear derating factor Operating and storage temperature range Tj, Tstg -55 to +150 °C Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a) RJA 62.5 °C/W Junction to ambient(b) RJA 32 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. Issue 1 - July 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXMN10A25G Thermal characteristics Issue 1 - July 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXMN10A25G Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Drain-source breakdown voltage V(BR)DSS 100 Typ. Max. Unit Conditions Static V ID= 250A, VGS=0V Zero gate voltage drain current IDSS 0.5 A VDS= 100V, VGS=0V Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-source threshold voltage VGS(th) 4.0 V ID= 250A, VDS=VGS Static drain-source on-state resistance (*) RDS(on) 0.125 VGS= 10V, ID= 2.9A 0.150 VGS= 6V, ID = 2.6A 2.0 gfs 7.3 S VDS= 15V, ID= 2.9A Input capacitance Ciss 859 pF Output capacitance Coss 57 pF VDS= 50V, VGS=0V f=1MHz Reverse transfer capacitance Crss 33 pF Turn-on-delay time td(on) 4.9 ns Rise time tr 3.7 ns Turn-off delay time td(off) 18 ns Fall time tf 9.4 ns Gate charge Qg 9.6 nC VDS= 50V, VGS= 5V ID= 2.9A Total gate charge Qg 17 nC Gate-source charge Qgs 3.8 nC VDS= 50V, VGS= 10V ID= 2.9A Gate drain charge Qgd 5.4 nC Diode forward voltage(*) VSD 0.85 Reverse recovery time(‡) trr Reverse recovery charge(‡) Qrr Forward transconductance(*)(‡) Dynamic(‡) Switching (†) (‡) VDD= 50V, ID= 1A RG≅6.0, VGS= 10V Source-drain diode 0.95 V Tj=25°C, IS= 4A, VGS=0V 40.5 ns 62 nC Tj=25°C, IS= 2.9A, di/dt=100A/s NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Issue 1 - July 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXMN10A25G Typical Characteristics Issue 1 - July 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXMN10A25G Typical Characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 1 - July 2006 © Zetex Semiconductors plc 2006 Switching time test circuit 6 www.zetex.com ZXMN10A25G Intentionally left blank Issue 1 - July 2006 © Zetex Semiconductors plc 2006 7 www.zetex.com ZXMN10A25G Package outline - SOT223 DIM Millimeters Inches DIM Millimeters Min Max Inches Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - July 2006 © Zetex Semiconductors plc 2006 8 www.zetex.com