DIODES ZXTP23015CFHTA

ZXTP23015CFH
15V, SOT23, PNP medium power transistor
Summary
V(BR)CES > -15V, V(BR)CEO > -15V
V(BR)ECO > -6V
IC(CONT) = -6A
RCE(SAT) = 20m⍀ typical
VCE(SAT) < -36mV @ -1A
PD = 1.25W
Complementary part number ZXTN23015CFH
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Feature
•
Higher power dissipation SOT23 package
•
High peak current
•
Low saturation voltage
•
15V forward blocking voltage
•
6V reverse blocking voltage
E
Applications
E
•
High side disconnect switches
•
DC - DC converters
•
MOSFET and IGBT gate driving
•
Motor drive
•
Relay, lamp, and solenoid drive
C
B
Pinout - top view
Ordering information
Device
ZXTP23015CFHTA
Reel size
(inches)
Tape width
Quantity per reel
7
8mm
3000
Device marking
317
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ZXTP23015CFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
VCBO
-15
V
Collector-emitter voltage
V(BR)CES
-15
V
Collector-emitter voltage
VCEO
-15
V
Emitter-base voltage
VEBO
-7.0
V
Emitter-collector voltage
VECO
-6.0
V
ICM
-10
A
Continuous collector current (c)
IC
-5
A
Continuous collector current (d)
IC
-6
A
Base current
IB
-1.2
A
Power dissipation @ TA=25oC (a)
PD
0.73
5.84
W
mW/oC
PD
1.05
8.4
W
mW/oC
PD
1.25
9.6
W
mW/oC
PD
1.81
14.5
W
mW/oC
Tj:Tstg
-55 to
+150
Symbol
Value
Junction to ambient (a)
R⍜JA
171
o
Junction to ambient (b)
R⍜JA
119
o
Junction to ambient (c)
R⍜JA
100
o
Junction to ambient (d)
R⍜JA
69
o
Collector-base voltage
Peak pulse current
Linear derating factor (a)
Power dissipation @ TA=25oC (b)
Linear derating factor
(b)
Power dissipation @ TA=25oC (c)
Linear derating factor (c)
Power dissipation @ TA=25oC (d)
Linear derating factor (d)
Operating and storage temperature
o
C
Thermal resistance
Parameter
Unit
C/W
C/W
C/W
C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
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ZXTP23015CFH
Characteristics
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ZXTP23015CFH
ELECTRICAL CHARACTERISTICS (at TAMB = 25°C unless otherwise stated)
Parameter
Min.
Typ.
Collector-base breakdown voltage V(BR)CBO
-15
-40
V
IC=-100␮A
Collector-emitter breakdown
voltage
V(BR)CES
-15
-40
V
IC =-100␮A
Collector-emitter breakdown
voltage
V(BR)CEO
-15
-25
V
IC=-10mA(*)
Emitter-base breakdown voltage
V(BR)EBO
-7.0
-8.2
V
IE=-100␮A
Emitter-collector breakdown
voltage
V(BR)ECO
-6.0
-8.5
V
IE=-100␮A
Collector-emitter cut-off current
ICES
-20
nA
VCE=-12V
Collector-base cut-off current
ICBO
-20
nA
VCB=-12V
Emitter-base cut-off current
IEBO
-10
nA
VEB=-6V
Static forward current transfer
ratio
HFE
Collector-emitter saturation
voltage
Base-emitter saturation voltage
Symbol
200
380
200
350
140
220
VCE(sat)
VBE(sat)
Max. Unit Conditions
IC=-10mA, VCE=-2V (*)
560
IC=-500mA, VCE=-2V
Ic=-6A, VCE=-2V
-6
-10
mV
IC=-100mA, IB=-10mA(*)
-27
-36
mV
IC=-1A, IB=-100mA(*)
-90
-120
mV
IC=-3A, IB=-60mA(*)
-140
-190
mV
IC=-6A, IB=-240mA(*)
-0.83 -0.93
V
IC=-3A, IB=-60mA(*)
-0.93 -1.03
V
IC=-6A, IB=-240mA(*)
-0.83 -0.93
V
IC=-6A, VCE=-2V(*)
Base-emitter turn-on voltage
VBE(on)
Transition frequency
fT
270
Output capacitance
Cobo
78.4
pF
VCB=-10V, f=1MHz
Delay time
t (d)
16
ns
Rise time
t (r)
13
ns
VCC=-5V, IC=-3A,
IB1=IB2=-150mA
Storage time
t (stg)
123
ns
Fall time
t (f)
9
ns
MHz Ic=-500mA, VCE=-2V,
f=50MHz
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300␮S. Duty cycle ⱕ2%.
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ZXTP23015CFH
Typical characteristics
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ZXTP23015CFH
Intentionally left blank
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ZXTP23015CFH
Package outline - SOT23
E
e
e1
b
3 leads
L1
D
E1
A
A1
Dim.
L
c
Millimeters
Inches
Dim.
Millimeters
Min.
Max.
Min.
Max.
A
-
1.12
-
0.044
e1
A1
0.01
0.10
0.0004
0.004
E
2.10
2.64
0.083
0.104
b
0.30
0.50
0.012
0.020
E1
1.20
1.40
0.047
0.055
c
0.085
0.20
0.003
0.008
L
0.25
0.60
0.0098
0.0236
D
2.80
3.04
0.110
0.120
L1
0.45
0.62
0.018
0.024
-
-
-
-
-
e
0.95 NOM
Min.
0.037 NOM
Max.
Inches
1.90 NOM
Min.
Max.
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP23015CFH
Definitions
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“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
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Production has been discontinued
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This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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