Order this document by 2N6071/D SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors *Motorola preferred devices . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. TRIACs 4 AMPERES RMS 200 thru 600 VOLTS • Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions • Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B • Blocking Voltages to 600 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability MT1 MT2 G MT2 G MT2 MT1 CASE 77-08 (TO-225AA) STYLE 5 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating *Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = 25 to 110°C) Symbol Value VDRM 2N6071A,B 2N6073A,B 2N6075A,B *On-State Current RMS (TC = 85°C) *Peak Surge Current (One Full cycle, 60 Hz, TJ = –40 to +110°C) Circuit Fusing Considerations (t = 8.3 ms) *Peak Gate Power *Average Gate Power *Peak Gate Voltage Unit Volts 200 400 600 IT(RMS) 4 Amps ITSM 30 Amps I2t 3.7 A2s PGM 10 Watts PG(AV) 0.5 Watt VGM 5 Volts *Indicates JEDEC Registered Data. 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data Motorola, Inc. 1998 1 MAXIMUM RATINGS Rating *Operating Junction Temperature Range *Storage Temperature Range Mounting Torque (6-32 Screw)(1) Symbol Value Unit TJ –40 to +110 °C Tstg –40 to +150 °C — 8 in. lb. *Indicates JEDEC Registered Data. 1. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds. Consult factory for lead bending options. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, Junction to Case RθJC 3.5 °C/W Thermal Resistance, Junction to Ambient RθJA 75 °C/W *Indicates JEDEC Registered Data. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol *Peak Blocking Current (VD = Rated VDRM, gate open, TJ = 25°C) (TJ = 110°C) IDRM *On-State Voltage (Either Direction) (ITM = 6 A Peak) VTM *Peak Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = –40°C) MT2(+), G(+); MT2(–), G(–) All Types MT2(+), G(–); MT2(–), G(+) (Main Terminal Voltage = Rated VDRM, RL = 10 k ohms, TJ = 110°C) MT2(+), G(+); MT2(–), G(–) All Types MT2(+), G(–); MT2(–), G(+) VGT *Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, TJ = –40°C) (Initiating Current = 1 Adc) 2N6071A,B, 2N6073A,B, 2N6075A,B (TJ = 25°C) 2N6071A,B, 2N6073A,B, 2N6075A,B IH Turn-On Time (Either Direction) (ITM = 14 Adc, IGT = 100 mAdc) Blocking Voltage Application Rate at Commutation @ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Commutating di/dt = 2.0 A/ms Min Typ Max Unit — — — — 10 2 µA mA — — 2 Volts Volts — — 1.4 1.4 2.5 2.5 0.2 0.2 — — — — mA — — — — 30 15 ton — 1.5 — µs dv/dt(c) — 5 — V/µs *Indicates JEDEC Registered Data. 2 Motorola Thyristor Device Data QUADRANT (See Definition Below) IGT @ TJ I mA II mA III mA IV mA 2N6071A 2N6073A 2N6075A +25°C 5 5 5 10 –40°C 20 20 20 30 2N6071B 2N6073B 2N6075B +25°C 3 3 3 5 –40°C 15 15 15 20 Type Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc Vdc, RL = 100 ohms) Maximum Value *Indicates JEDEC Registered Data. SAMPLE APPLICATION: TTL-SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III 14 0V MC7400 4 7 VEE = 5.0 V + –VEE MT2(+), G(–) MT2(+), G(+) QUADRANT III QUADRANT IV MT2(–), G(–) MT2(–), G(+) G(–) 115 VAC 60 Hz 1. Consistent predictable turn-on points. 2. Simplified circuitry. 3. Fast turn-on time for cooler, more efficient and reliable operation. MT2(+) QUADRANT I LOAD Trigger devices are recommended for gating on Triacs. They provide: QUADRANT DEFINITIONS QUADRANT II 2N6071A 510 Ω G(+) MT2(–) SENSITIVE GATE LOGIC REFERENCE IC Logic Functions Firing Quadrant II III TTL 2N6071A Series 2N6071A Series HTL 2N6071A Series 2N6071A Series CMOS (NAND) I 2N6071B Series CMOS (Buffer) Operational Amplifier Zero Voltage Switch Motorola Thyristor Device Data IV 2N6071B Series 2N6071B Series 2N6071B Series 2N6071A Series 2N6071A Series 2N6071A Series 2N6071A Series 3 FIGURE 1 – AVERAGE CURRENT DERATING FIGURE 2 – RMS CURRENT DERATING 110 110 α = 30° TC , CASE TEMPERATURE (° C) TC , CASE TEMPERATURE (° C) 60° 100 α = 30° 60° 90° 90 120° 180° dc α 80 α 70 α = CONDUCTION ANGLE 0 90° 100 180° α 80 α = CONDUCTION ANGLE 0 4.0 1.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMP) FIGURE 3 – POWER DISSIPATION 8.0 α 180° α 6.0 P(AV) , AVERAGE POWER (WATTS) P(AV) , AVERAGE POWER (WATTS) α dc 120° α = CONDUCTION ANGLE 90° 60° 4.0 α = 30° 2.0 0 dc α 6.0 α = 180° α = CONDUCTION ANGLE 120° 4.0 30° 2.0 60° 90° 0 0 1.0 2.0 3.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 4.0 0 3.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2.0 1.0 0.7 0.5 0.3 –60 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 1.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 4.0 FIGURE 6 – TYPICAL GATE-TRIGGER CURRENT I GTM , GATE TRIGGER CURRENT (NORMALIZED) FIGURE 5 – TYPICAL GATE-TRIGGER VOLTAGE VGTM , GATE TRIGGER VOLTAGE (NORMALIZED) 4.0 FIGURE 4 – POWER DISSIPATION 8.0 4 dc α 70 1.0 2.0 3.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 120° 90 140 3.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2.0 1.0 0.7 0.5 0.3 –60 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 Motorola Thyristor Device Data FIGURE 7 – MAXIMUM ON-STATE CHARACTERISTICS FIGURE 8 – TYPICAL HOLDING CURRENT 40 IH, HOLDING CURRENT (NORMALIZED) 3.0 30 20 10 ITM , ON-STATE CURRENT (AMP) 7.0 5.0 2.0 1.0 0.7 0.5 0.3 –60 TJ = 110°C 3.0 GATE OPEN APPLIES TO EITHER DIRECTION –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) 2.0 TJ = 25°C FIGURE 9 – MAXIMUM ALLOWABLE SURGE CURRENT 1.0 34 32 PEAK SINEWAVE CURRENT (AMP) 0.7 0.5 0.3 0.2 30 28 26 24 TJ = –40 to +110°C f = 60 Hz 22 20 18 16 0.1 0 1.0 2.0 3.0 4.0 5.0 14 1.0 2.0 4.0 5.0 7.0 10 NUMBER OF FULL CYCLES VTM, ON-STATE VOLTAGE (VOLTS) Z θJC(t), TRANSIENT THERMAL IMPEDANCE (°C/W) 3.0 FIGURE 10 – THERMAL RESPONSE 10 5.0 MAXIMUM 3.0 2.0 TYPICAL 1.0 0.5 0.3 0.2 0.1 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms) Motorola Thyristor Device Data 5 PACKAGE DIMENSIONS –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 ––– MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ––– STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE CASE 77–09 (TO–225AA) ISSUE W Motorola reserves the right to make changes without further notice to any products herein. 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